Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes
文献类型：期刊论文
| 作者 | Jia, Hongfeng; Yu, Huabin; Kang, Yang; Ren, Zhongjie; Memon, Muhammad Hunain; Guo, Wei; Sun, Haiding; Long, Shibing |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2021 |
| 卷号 | 129期号:13 |
| 关键词 | ENHANCED PERFORMANCE PARAMETERS WELL FACE |
| 英文摘要 | This study systematically investigates the optical performance of N-polar deep-ultraviolet light-emitting diodes (DUV LEDs) in consideration of different quantum structures in the active region, with a highlight on various thicknesses of quantum barrier (QB), quantum well (QW), and the electron-blocking layer (EBL). The results show that the internal quantum efficiency (IQE), as well as light output power (LOP) of N-polar DUV LED, is not sensitive to QB thickness. On the contrary, the LOP and IQE performance can be significantly enhanced by increasing the QW thickness from 2 to 4nm. Moreover, a saturated LOP in the N-polar DUV LEDs can be observed after QW thickness increased to a certain level as there is a trade-off between boosted carrier concentration and decreased wave function overlap in the active region. Lastly, the impact of the EBL on the optical performance of the N-polar DUV LED is also investigated. Specifically, a thicker EBL or a higher Al composition in the EBL leads to an increase in the turn-on voltage and series resistance while the LOP value remains unchanged. These findings lay the foundation for the development of high-performance N-polar DUV LEDs of the future. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/22038]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | Sun, HD (corresponding author), Univ Sci & Technol China, Sch Microelect, Hefei 230026, Anhui, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Jia, Hongfeng,Yu, Huabin,Kang, Yang,et al. Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes[J]. JOURNAL OF APPLIED PHYSICS,2021,129(13). |
| APA | Jia, Hongfeng.,Yu, Huabin.,Kang, Yang.,Ren, Zhongjie.,Memon, Muhammad Hunain.,...&Long, Shibing.(2021).Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes.JOURNAL OF APPLIED PHYSICS,129(13). |
| MLA | Jia, Hongfeng,et al."Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes".JOURNAL OF APPLIED PHYSICS 129.13(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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