Control of the metal-insulator transition in NdNiO3 thin films through the interplay between structural and electronic properties
文献类型：期刊论文
| 作者 | Suyolcu, Y. E.; Fuersich, K.; Hepting, M.; Zhong, Z.; Lu, Y.; Wang, Y. ; Christiani, G.; Logvenov, G.; Hansmann, P.; Minola, M.
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| 刊名 | PHYSICAL REVIEW MATERIALS
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| 出版日期 | 2021 |
| 卷号 | 5期号:4 |
| 关键词 | EMERGENT PHENOMENA OXYGEN HETEROSTRUCTURES INFORMATION ANISOTROPY OCTAHEDRA PHYSICS |
| 英文摘要 | Heteroepitaxy offers a new type of control mechanism for the crystal structure, the electronic correlations, and thus the functional properties of transition-metal oxides. Here we combine electrical transport measurements, high-resolution scanning transmission electron microscopy (STEM), and density functional theory (DFT) to investigate the evolution of the metal-to-insulator transition (MIT) in NdNiO3 films as a function of film thickness and NdGaO3 substrate crystallographic orientation. We find that for two different substrate facets, orthorhombic (101) and (011), modifications of the NiO6 octahedral network are key for tuning the transition temperature T-MIT over a wide temperature range. A comparison of films of identical thickness reveals that growth on [101]-oriented substrates generally results in a higher T-MIT, which can be attributed to an enhanced bond disproportionation as revealed by the DFT+U calculations, and a tendency of [011]-oriented films to formation of structural defects and stabilization of nonequilibrium phases. Our results provide insights into the structure-property relationship of a correlated electron system and its evolution at microscopic length scales and give new perspectives for the epitaxial control of macroscopic phases in metal-oxide heterostructures. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/22045]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | Benckiser, E (corresponding author), Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany. |
| 推荐引用方式 GB/T 7714 | Suyolcu, Y. E.,Fuersich, K.,Hepting, M.,et al. Control of the metal-insulator transition in NdNiO3 thin films through the interplay between structural and electronic properties[J]. PHYSICAL REVIEW MATERIALS,2021,5(4). |
| APA | Suyolcu, Y. E..,Fuersich, K..,Hepting, M..,Zhong, Z..,Lu, Y..,...&Benckiser, E..(2021).Control of the metal-insulator transition in NdNiO3 thin films through the interplay between structural and electronic properties.PHYSICAL REVIEW MATERIALS,5(4). |
| MLA | Suyolcu, Y. E.,et al."Control of the metal-insulator transition in NdNiO3 thin films through the interplay between structural and electronic properties".PHYSICAL REVIEW MATERIALS 5.4(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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