Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors
文献类型:期刊论文
作者 | Wu, Zhendong; Zhang, Hengbo; Wang, Xiaolong; Zhou, Weisong; Liang, Lingyan; Cao, Yanwei; Cao, Hongtao |
刊名 | IEEE ELECTRON DEVICE LETTERS
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出版日期 | 2021 |
卷号 | 42期号:4页码:529-532 |
英文摘要 | In this work, we study the intrinsic connection between target quality and performance of sputtered In-Sn-Zn-O (ITZO) thin-film transistors. Using a densetarget, the ITZO device overall performance can be improved synergistically. The optimized device exhibits a steep subthreshold swing of 0.13 V/decade, a high on/off current ratio of 2.47 x 10(8), a threshold voltage of -0.03 V, a saturation fieldeffect mobility (mu(FE)) of 36.1 cm(2)/Vs, and a small threshold voltage shift (Delta V-th) of -0.55 V under negative bias stress (-20 V, 3600 s). In contrast, the mu(FE) shows a reverse trend to Delta V-th when using a target with a relatively small density and poor crystallinity. In this case, although the amount of oxygen vacancy in the films can be reduced for better stability via increasing the sputtering power, the film density observably drops due to serious preferential sputtering, leading to smaller mu(FE). |
源URL | [http://ir.nimte.ac.cn/handle/174433/22058] ![]() |
专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
作者单位 | 1.Liang, LY 2.Cao, HT (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China. |
推荐引用方式 GB/T 7714 | Wu, Zhendong,Zhang, Hengbo,Wang, Xiaolong,et al. Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors[J]. IEEE ELECTRON DEVICE LETTERS,2021,42(4):529-532. |
APA | Wu, Zhendong.,Zhang, Hengbo.,Wang, Xiaolong.,Zhou, Weisong.,Liang, Lingyan.,...&Cao, Hongtao.(2021).Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors.IEEE ELECTRON DEVICE LETTERS,42(4),529-532. |
MLA | Wu, Zhendong,et al."Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors".IEEE ELECTRON DEVICE LETTERS 42.4(2021):529-532. |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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