中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors

文献类型:期刊论文

作者Wu, Zhendong; Zhang, Hengbo; Wang, Xiaolong; Zhou, Weisong; Liang, Lingyan; Cao, Yanwei; Cao, Hongtao
刊名IEEE ELECTRON DEVICE LETTERS
出版日期2021
卷号42期号:4页码:529-532
英文摘要In this work, we study the intrinsic connection between target quality and performance of sputtered In-Sn-Zn-O (ITZO) thin-film transistors. Using a densetarget, the ITZO device overall performance can be improved synergistically. The optimized device exhibits a steep subthreshold swing of 0.13 V/decade, a high on/off current ratio of 2.47 x 10(8), a threshold voltage of -0.03 V, a saturation fieldeffect mobility (mu(FE)) of 36.1 cm(2)/Vs, and a small threshold voltage shift (Delta V-th) of -0.55 V under negative bias stress (-20 V, 3600 s). In contrast, the mu(FE) shows a reverse trend to Delta V-th when using a target with a relatively small density and poor crystallinity. In this case, although the amount of oxygen vacancy in the films can be reduced for better stability via increasing the sputtering power, the film density observably drops due to serious preferential sputtering, leading to smaller mu(FE).
源URL[http://ir.nimte.ac.cn/handle/174433/22058]  
专题中国科学院宁波材料技术与工程研究所
2021专题_期刊论文
作者单位1.Liang, LY
2.Cao, HT (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Lab Adv Nano Mat & Devices, Ningbo 315201, Peoples R China.
推荐引用方式
GB/T 7714
Wu, Zhendong,Zhang, Hengbo,Wang, Xiaolong,et al. Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors[J]. IEEE ELECTRON DEVICE LETTERS,2021,42(4):529-532.
APA Wu, Zhendong.,Zhang, Hengbo.,Wang, Xiaolong.,Zhou, Weisong.,Liang, Lingyan.,...&Cao, Hongtao.(2021).Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors.IEEE ELECTRON DEVICE LETTERS,42(4),529-532.
MLA Wu, Zhendong,et al."Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors".IEEE ELECTRON DEVICE LETTERS 42.4(2021):529-532.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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