Spin-valley coupling in a two-dimensional VSi2N4 monolayer
文献类型:期刊论文
作者 | Cui, Qirui; Zhu, Yingmei; Liang, Jinghua; Cui, Ping; Yang, Hongxin |
刊名 | PHYSICAL REVIEW B
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出版日期 | 2021 |
卷号 | 103期号:8 |
英文摘要 | Materials that integrate magnetism, miniaturization, and valley properties hold potential for spintronic and valleytronic nanodevices. Recently, ferromagnetism was reported to be able to exist in the VSi2N4 monolayer which is half-metallic and belongs to a new kind of two-dimensional material [Hong et al., Science 369, 670 (2020)]. Using first-principles calculations and model analysis, we find that VSi2N4 is a ferromagnetic semiconductor harboring valley-contrasting physics and a magnetic critical temperature over room temperature. By tuning magnetization orientation from in plane to out of plane, valley polarization can be generated, resulting in the anomalous valley Hall effect in VSi2N4. Furthermore, we obtain the formula for energy splitting of valleys and adopt a tight-binding model for VSi2N4, which elucidates the physical mechanism of spin-valley coupling. More interestingly, under 4% tensile strain, the intrinsic magnetic anisotropy of VSi2N4 becomes out of plane, and spontaneous valley polarization is achieved. Our results highlight that VSi2N4 is a good candidate for spintronic and valleytronic applications. |
源URL | [http://ir.nimte.ac.cn/handle/174433/22194] ![]() |
专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
作者单位 | 1.Yang, HX (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 2.Yang, HX (corresponding author), Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China. |
推荐引用方式 GB/T 7714 | Cui, Qirui,Zhu, Yingmei,Liang, Jinghua,et al. Spin-valley coupling in a two-dimensional VSi2N4 monolayer[J]. PHYSICAL REVIEW B,2021,103(8). |
APA | Cui, Qirui,Zhu, Yingmei,Liang, Jinghua,Cui, Ping,&Yang, Hongxin.(2021).Spin-valley coupling in a two-dimensional VSi2N4 monolayer.PHYSICAL REVIEW B,103(8). |
MLA | Cui, Qirui,et al."Spin-valley coupling in a two-dimensional VSi2N4 monolayer".PHYSICAL REVIEW B 103.8(2021). |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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