Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint (vol 14, pg 232, 2021)
文献类型：期刊论文
| 作者 | Dai, Chaoqi; Chen, Peiqin; Qi, Shaocheng; Hu, Yongbin; Song, Zhitang; Dai, Mingzhi |
| 刊名 | NANO RESEARCH
 |
| 出版日期 | 2021 |
| 卷号 | 14期号:7页码:2469-2469 |
| 英文摘要 | Figure 1 (d) To implement an NAND gate, the traditional design uses 3 transistors, the latest report uses 2 transistors [14], and the single transistor design uses 1 transistor. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/22203]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | 1.Song, ZT (corresponding author), Chinese Acad Sci, Shanghai Microsyst & Informat Technol Inst, Shanghai 200433, Peoples R China. 2.Dai, MZ (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 3.Song, ZT 4.Dai, MZ (corresponding author), Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Dai, Chaoqi,Chen, Peiqin,Qi, Shaocheng,et al. Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint (vol 14, pg 232, 2021)[J]. NANO RESEARCH,2021,14(7):2469-2469. |
| APA | Dai, Chaoqi,Chen, Peiqin,Qi, Shaocheng,Hu, Yongbin,Song, Zhitang,&Dai, Mingzhi.(2021).Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint (vol 14, pg 232, 2021).NANO RESEARCH,14(7),2469-2469. |
| MLA | Dai, Chaoqi,et al."Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint (vol 14, pg 232, 2021)".NANO RESEARCH 14.7(2021):2469-2469. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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