Strain-Mediated High Conductivity in Ultrathin Antiferromagnetic Metallic Nitrides
文献类型：期刊论文
| 作者 | Jin, Qiao; Cheng, Hu; Wang, Zhiwen; Zhang, Qinghua; Lin, Shan; Roldan, Manuel A.; Zhao, Jiali; Wang, Jia-Ou; Chen, Shuang; He, Meng |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 33期号:2 |
| 关键词 | BULK MODULUS MAGNETIZATION TEMPERATURES TRANSITION FILMS GAP |
| 英文摘要 | Strain engineering provides the ability to control the ground states and associated phase transition in epitaxial films. However, the systematic study of the intrinsic character and strain dependency in transition-metal nitrides remains challenging due to the difficulty in fabricating stoichiometric and high-quality films. Here the observation of an electronic state transition in highly crystalline antiferromagnetic CrN films with strain and reduced dimensionality is reported. By shrinking the film thickness to a critical value of approximate to 30 unit cells, a profound conductivity reduction accompanied by unexpected volume expansion is observed in CrN films. The electrical conductivity is observed surprisingly when the CrN layer is as thin as a single unit cell thick, which is far below the critical thickness of most metallic films. It is found that the metallicity of an ultrathin CrN film recovers from insulating behavior upon the removal of the as-grown strain by the fabrication of freestanding nitride films. Both first-principles calculations and linear dichroism measurements reveal that the strain-mediated orbital splitting effectively customizes the relatively small bandgap at the Fermi level, leading to an exotic phase transition in CrN. The ability to achieve highly conductive nitride ultrathin films by harnessing strain-control over competing phases can be used for utilizing their exceptional characteristics. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/22389]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | 1.Wang, SM (corresponding author), Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China. 2.Guo, EJ (corresponding author), Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China. 3.Guo, EJ (corresponding author), Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China. 4.Guo, EJ (corresponding author), Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China. 5.Jin, KJ 6.Guo, EJ (corresponding author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. 7.Guo, EJ (corresponding author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. 8.Yang, HX (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Jin, Qiao,Cheng, Hu,Wang, Zhiwen,et al. Strain-Mediated High Conductivity in Ultrathin Antiferromagnetic Metallic Nitrides[J]. ADVANCED MATERIALS,2021,33(2). |
| APA | Jin, Qiao.,Cheng, Hu.,Wang, Zhiwen.,Zhang, Qinghua.,Lin, Shan.,...&Guo, Er-Jia.(2021).Strain-Mediated High Conductivity in Ultrathin Antiferromagnetic Metallic Nitrides.ADVANCED MATERIALS,33(2). |
| MLA | Jin, Qiao,et al."Strain-Mediated High Conductivity in Ultrathin Antiferromagnetic Metallic Nitrides".ADVANCED MATERIALS 33.2(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。