Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature
文献类型：期刊论文
| 作者 | Wang, Tao; Yang, Zhen; Li, Bingsheng; Xu, Shuai; Liao, Qing; Ge, Fangfang; Zhang, Tongmin; Li, Jun |
| 刊名 | MATERIALS
 |
| 出版日期 | 2020 |
| 卷号 | 13期号:24 |
| 关键词 | SILICON-CARBIDE ON-INSULATOR HYDROGEN IMPLANTATION SURFACE EXFOLIATION BUBBLE FORMATION ION-CUT IRRADIATION HELIUM WAFERS H+ |
| 英文摘要 | Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as ion-cut or Smart-Cut. It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in the 6H-SiC implanted by H-2(+) to a fluence of 5 x 10(16) H-2(+)/cm(2) at 450 and 900 degrees C was investigated by a combination of Raman spectroscopy and transmission electron microscopy. Different levels of damage caused by dynamic annealing were observed by Raman spectroscopy and transmission electron microscopy in the as-implanted sample. Atomic force microscopy and scanning white-light interferometry were used to observe the sample surface morphology. Surface blisters and exfoliations were observed in the sample implanted at 450 degrees C and then annealed at 1100 degrees C for 15 min, whereas surface blisters and exfoliation occurred in the sample implanted at 900 degrees C without further thermal treatment. This finding can be attributed to the increase in the internal pressure of platelets during high temperature implantation. The exfoliation efficiency, location, and roughness after exfoliation were investigated and possible reasons were discussed. This work provides a basis for further understanding and improving the high-efficiency ion-cut technology. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/22404]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2020专题_期刊论文 2021专题_期刊论文 |
| 作者单位 | 1.Li, BS (corresponding author), Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China. 2.Wang, T (corresponding author), China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Sichuan, Peoples R China. 3.Yang, Z (corresponding author), Sun Yat Sen Univ, Sino French Inst Nucl Engn & Technol, Zhuhai 519082, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Wang, Tao,Yang, Zhen,Li, Bingsheng,et al. Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature[J]. MATERIALS,2020,13(24). |
| APA | Wang, Tao.,Yang, Zhen.,Li, Bingsheng.,Xu, Shuai.,Liao, Qing.,...&Li, Jun.(2020).Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature.MATERIALS,13(24). |
| MLA | Wang, Tao,et al."Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature".MATERIALS 13.24(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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