Single-crystal growth of n-type SnS0.95 by the temperature-gradient technique
文献类型：期刊论文
| 作者 | Yin, Yinong; Cai, Jianfeng; Wang, Hongxiang; Xiao, Yukun; Hu, Haoyang; Tan, Xiaojian; Liu, Guo-Qiang; Jiang, Jun |
| 刊名 | VACUUM
 |
| 出版日期 | 2020 |
| 卷号 | 182 |
| 关键词 | HIGH THERMOELECTRIC PERFORMANCE SNS SULFIDE |
| 英文摘要 | Tin monosulfide (SnS) is an interesting semiconductor for its promising use in multifunctional devices. Compared to the p-type doping via monovalent metal ions, the n-type doping of SnS is challenging because of the easy formation of intrinsic defect V-Sn(II). In this work, we grew a sizable n-type SnS single crystal through the temperature-gradient technique by simply introducing the S vacancy. The Rietveld refinement of x-ray powder diffraction gave the lattice parameters of our sample, which agrees well with the literature. The composition ratio of Sn:S was examined to be 1:0.96 verifying the existence of S vacancies. The Hall measurement confirmed the n-type carriers in our crystal, reaching a carrier concentration of similar to 1.7 x 10(18) cm(-3). Furthermore, the thermoelectric measurements revealed large Seebeck coefficients and good electrical conductivities. In the temperature regime of 300 K-550 K, the acoustic scattering of electrons was found to dominate the overall in-plane electrical transport. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/22428]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2020专题_期刊论文 2021专题_期刊论文 |
| 作者单位 | 1.Jiang, J (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 2.Yin, YN |
| 推荐引用方式 GB/T 7714 | Yin, Yinong,Cai, Jianfeng,Wang, Hongxiang,et al. Single-crystal growth of n-type SnS0.95 by the temperature-gradient technique[J]. VACUUM,2020,182. |
| APA | Yin, Yinong.,Cai, Jianfeng.,Wang, Hongxiang.,Xiao, Yukun.,Hu, Haoyang.,...&Jiang, Jun.(2020).Single-crystal growth of n-type SnS0.95 by the temperature-gradient technique.VACUUM,182. |
| MLA | Yin, Yinong,et al."Single-crystal growth of n-type SnS0.95 by the temperature-gradient technique".VACUUM 182(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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