Excellent passivation with implied open-circuit voltage of 710 mV for p-type multi-crystalline black silicon using PECVD grown a-Si:H passivation layer
文献类型：期刊论文
| 作者 | Lin, Yiran; Feng, Mengmeng; Wang, Zhixue; Zeng, Yuheng; Liao, Mingdun; Gong, Longfei; Yan, Baojie; Yuan, Zhizhong; Ye, Jichun |
| 刊名 | SOLAR ENERGY
 |
| 出版日期 | 2020 |
| 卷号 | 211页码:753-758 |
| 关键词 | SOLAR-CELLS NANOWIRE |
| 英文摘要 | Hydrogenated amorphous silicon (a-Si:H) deposited using plasma-enhanced chemical vapor deposition (PECVD) is used as the passivation layer for p-type multi-crystalline black silicon (p-mc-b-Si) wafers. The effects of deposition conditions on passivation quality are investigated. The optimized a-Si:H passivation layer enables the best surface passivation with an implied open-circuit voltage (iV(oc)) of 710 mV, which is better than other conventional passivation materials. The excellent passivation quality possibly resulted from that the activated hydrogen from a-Si:H at similar to 200 degrees C was able to passivate both surface defect states and bulk trap states of p-mc-b-Si effectively. Moreover, an additional SiNx capping layer helps to reduce reflectance significantly and to keep passivation quality. This work suggests that b-Si passivated by a-Si:H/SiNx stack film shows potential for various optoelectronic devices that requires both excellent optical anti-reflectance and surface passivation. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/22462]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2020专题_期刊论文 2021专题_期刊论文 |
| 作者单位 | 1.Ye, JC (corresponding author), Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Jiangsu, Peoples R China. 2.Zeng, YH 3.Yuan, ZZ 4.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Lin, Yiran,Feng, Mengmeng,Wang, Zhixue,et al. Excellent passivation with implied open-circuit voltage of 710 mV for p-type multi-crystalline black silicon using PECVD grown a-Si:H passivation layer[J]. SOLAR ENERGY,2020,211:753-758. |
| APA | Lin, Yiran.,Feng, Mengmeng.,Wang, Zhixue.,Zeng, Yuheng.,Liao, Mingdun.,...&Ye, Jichun.(2020).Excellent passivation with implied open-circuit voltage of 710 mV for p-type multi-crystalline black silicon using PECVD grown a-Si:H passivation layer.SOLAR ENERGY,211,753-758. |
| MLA | Lin, Yiran,et al."Excellent passivation with implied open-circuit voltage of 710 mV for p-type multi-crystalline black silicon using PECVD grown a-Si:H passivation layer".SOLAR ENERGY 211(2020):753-758. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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