Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation
文献类型：期刊论文
| 作者 | Fatheema, Jameela; Fatima, Sabeen; Ali, Bilal Jehanzaib; Mohammad, Mohammad Ali; Shahid, Tauseef; Islam, Amjad; Rizwan, Syed |
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2020 |
| 卷号 | 10期号:11 |
| 关键词 | MEMORY OXIDE RRAM MECHANISM ALUMINUM |
| 英文摘要 | Resistive switching characteristics in Al (40 nm)/Al2O3 (x nm)/Ni (50 nm) were analyzed while the middle layer thickness is varied from 5 nm to 20 nm with an increment of 5 nm each. Al/Al2O3/Ni with a total thickness of 100 nm showed the most prominent results. The current compliance was 100 mA while the voltage range for each design varied in the range of +/- 4 V, showing bipolar resistive switching. The double logarithmic curves indicated the presence of the Ohmic conduction and space-charge limited current mechanism. Moreover, density functional theory based calculations were performed for aluminum oxide with induced oxygen vacancy defects. The structures with oxygen vacancies showed that the nature of aluminum oxide was converted to semi-conducting from insulating, i.e., the bandgap was decreased from similar to 6 eV to similar to 0.6 eV. Density of states displayed that the atoms neighboring the oxygen vacant sites are responsible for a shift in states toward the valence band and Fermi level. Formation of a conduction filament (CF) is found essential for conduction in resistive random access memory (RRAM), and the computational analysis clarified that induction of oxygen vacancies is vital for the formation of CF. Finally, this work presents a detailed discussion and understanding of resistive switching in aluminum oxide-based RRAM, which is significant in the advancement of non-volatile data storage application. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/22498]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2020专题_期刊论文 2021专题_期刊论文 |
| 作者单位 | Rizwan, S (corresponding author), Natl Univ Sci & Technol NUST, Sch Nat Sci SNS, Dept Phys, Phys Characterizat & Simulat Lab PCSL, Islamabad 44000, Pakistan. |
| 推荐引用方式 GB/T 7714 | Fatheema, Jameela,Fatima, Sabeen,Ali, Bilal Jehanzaib,et al. Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation[J]. AIP ADVANCES,2020,10(11). |
| APA | Fatheema, Jameela.,Fatima, Sabeen.,Ali, Bilal Jehanzaib.,Mohammad, Mohammad Ali.,Shahid, Tauseef.,...&Rizwan, Syed.(2020).Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation.AIP ADVANCES,10(11). |
| MLA | Fatheema, Jameela,et al."Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation".AIP ADVANCES 10.11(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。