Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers
文献类型：期刊论文
| 作者 | Kang, Yang; Yu, Huabin; Ren, Zhongjie; Xing, Chong; Liu, Zhongling; Jia, Hongfeng; Guo, Wei; Sun, Haiding |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2020 |
| 卷号 | 67期号:11页码:4958-4962 |
| 关键词 | POLARIZATION PERFORMANCE |
| 英文摘要 | In this work, we demonstrate an AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) structure with the incorporation of inverted-V-shaped quantum barriers (QBs). Intriguingly, the light output power (LOP) can be remarkably boosted by 157% in comparison with conventional structurewith flat QBs, attributing to the successful enhancement of both electron-blocking capability and hole injection efficiency. More importantly, the device with inverted-V-shaped QBs can greatly accelerate the radiative recombination efficiency, alleviating the efficiency droop to only 3% while this number is as high at 47.1% in conventional DUV LED with flat QBs. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/22499]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2020专题_期刊论文 2021专题_期刊论文 |
| 作者单位 | Sun, HD (corresponding author), Univ Sci & Technol China, Sch Microelect, Hefei 230026, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Kang, Yang,Yu, Huabin,Ren, Zhongjie,et al. Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2020,67(11):4958-4962. |
| APA | Kang, Yang.,Yu, Huabin.,Ren, Zhongjie.,Xing, Chong.,Liu, Zhongling.,...&Sun, Haiding.(2020).Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers.IEEE TRANSACTIONS ON ELECTRON DEVICES,67(11),4958-4962. |
| MLA | Kang, Yang,et al."Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers".IEEE TRANSACTIONS ON ELECTRON DEVICES 67.11(2020):4958-4962. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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