中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Crystal Orientations Dependent Polarization Reversal in Ferroelectric PbZr0.2Ti0.8O3 Thin Films for Multilevel Data Storage Applications

文献类型:期刊论文

作者Pravarthana, Dhanapal; Wei, Jiafeng; Wang, Baomin; Luo, Fan; Yang, Huali; Guo, Shanshan; Mustafa, Zeeshan; Prellier, Wilfrid; Li, Run-Wei
刊名ADVANCED MATERIALS INTERFACES
出版日期2021
关键词ELASTIC DOMAIN-STRUCTURES PHASE EVOLUTION
英文摘要Deterministic creation of multiple ferroelectric states with variant values of polarization in ferroelectric thin films is promising for multilevel data storage applications. However, the intrinsic bi-stability of ferroelectric switching makes it challenging to achieve. The deterministic ferroelectric states can be achieved by multistep switching through various means such as controlling domain structure and switching by inducing local disorder, and also by crystal orientations. However, to determine the effect of crystal directions on the stability of multistep polarization reversal requires investigation on different crystal directions. A high-throughput approach namely combinatorial substrate epitaxy (CSE) is utilized to fabricate La0.7Sr0.3MnO3 (LSMO) polycrystalline substrate to grow PbZr0.2Ti0.8O3 (PZT) films epitaxially with different crystal directions in a single sample. The polarization reversal area is determined as a function of applied voltage along different . From the analysis, it is found that all exhibit multilevel polarization states due to multistep switching events. Further the degree of multilevel polarization states shows a sawtooth-like oscillatory behavior with increase in [111] miscut angle, which is attributed to influence of local disorder on the domain structure. Therefore, the realization of multilevel data storage device based on deterministic polarization reversal can be achieved with appropriate crystal directed thin films.
源URL[http://ir.nimte.ac.cn/handle/174433/21320]  
专题2021专题_期刊论文
作者单位1.Pravarthana, D
2.Li, RW (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, CAS Key Lab Magnet Mat & Devices, Ningbo 315201, Peoples R China.
3.Li, RW (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Peoples R China.
4.Li, RW (corresponding author), Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China.
推荐引用方式
GB/T 7714
Pravarthana, Dhanapal,Wei, Jiafeng,Wang, Baomin,et al. Crystal Orientations Dependent Polarization Reversal in Ferroelectric PbZr0.2Ti0.8O3 Thin Films for Multilevel Data Storage Applications[J]. ADVANCED MATERIALS INTERFACES,2021.
APA Pravarthana, Dhanapal.,Wei, Jiafeng.,Wang, Baomin.,Luo, Fan.,Yang, Huali.,...&Li, Run-Wei.(2021).Crystal Orientations Dependent Polarization Reversal in Ferroelectric PbZr0.2Ti0.8O3 Thin Films for Multilevel Data Storage Applications.ADVANCED MATERIALS INTERFACES.
MLA Pravarthana, Dhanapal,et al."Crystal Orientations Dependent Polarization Reversal in Ferroelectric PbZr0.2Ti0.8O3 Thin Films for Multilevel Data Storage Applications".ADVANCED MATERIALS INTERFACES (2021).

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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