ITO/SnO2 Interface Defect Passivation via Atomic Layer Deposited Al2O3 for High-Efficiency Perovskite Solar Cells
文献类型：期刊论文
| 作者 | Zhang, Yongqiang; Liu, Weiqing; Sun, Jingsong; Shou, Chunhui; Yu, Gang; Yang, Qing; Yang, Weichuang; Yan, Baojie; Sheng, Jiang; Ye, Jichun |
| 刊名 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
 |
| 出版日期 | 2021 |
| 关键词 | COMPACT LAYER IMPACT PERFORMANCE FILMS TIO2 SNO2 |
| 英文摘要 | Indium tin oxide (ITO) substrate is widely used as a transparent electrode in perovskite solar cells (PSCs). However, the intrinsic defects, especially on the ITO surface, are one of the most key factors to restrict the power conversion efficiency (PCE) of PSCs. Herein, a facile method to passivate the defects of the ITO/SnO2 interface using an ultrathin aluminum oxide (Al2O3) layer through atomic layer deposition, of which the film thickness is exactly regulated, is first demonstrated. With the optimized film thickness, carrier recombination at the ITO/SnO2 interface is effectively suppressed within the three-cycle Al2O3 layer, which results in an improved charge carrier collection efficiency from the SnO2 electron transporting layer to the ITO electrode. Furthermore, a thinner Al2O3 film (one cycle) does not passivate the interface defect effectively, and a thicker Al2O3 film (five cycles) retards the charge carrier extraction at the ITO/SnO2 interface. The average PCE of the three-cycle Al2O3-based PSC is 19.43%, among which the champion PCE is 20.24%, showing a significant improvement compared with the counterpart with an average PCE of 18.50%. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21377]  |
| 专题 | 2021专题_期刊论文 |
| 作者单位 | 1.Liu, WQ (corresponding author), Nanchang Hangkong Univ, Sch Testing & Optoelect Engn, Nanchang 330063, Jiangxi, Peoples R China. 2.Sheng, J 3.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Zhang, Yongqiang,Liu, Weiqing,Sun, Jingsong,et al. ITO/SnO2 Interface Defect Passivation via Atomic Layer Deposited Al2O3 for High-Efficiency Perovskite Solar Cells[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2021. |
| APA | Zhang, Yongqiang.,Liu, Weiqing.,Sun, Jingsong.,Shou, Chunhui.,Yu, Gang.,...&Ye, Jichun.(2021).ITO/SnO2 Interface Defect Passivation via Atomic Layer Deposited Al2O3 for High-Efficiency Perovskite Solar Cells.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. |
| MLA | Zhang, Yongqiang,et al."ITO/SnO2 Interface Defect Passivation via Atomic Layer Deposited Al2O3 for High-Efficiency Perovskite Solar Cells".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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