Passivating Contact with Phosphorus-Doped Polycrystalline Silicon-Nitride with an Excellent Implied Open-Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells
文献类型：期刊论文
| 作者 | Yang, Qing; Liu, Zunke; Lin, Yiran; Liu, Wei; Liao, Mingdun; Feng, Mengmeng; Zhi, Yuyan; Zheng, Jingming; Lu, Linna; Ma, Dian |
| 刊名 | SOLAR RRL
 |
| 出版日期 | 2021 |
| 卷号 | 5期号:11 |
| 关键词 | SI OXIDE |
| 英文摘要 | A P-doped polycrystalline silicon-nitride (n-poly-SiNx) as the electron selective collection layer in a tunnel oxide passivated contact (TOPCon) solar cell is reported. The nitrogen content is controlled by the active gas ratio of R = NH3/(SiH4 + NH3) during the plasma-enhanced chemical vapor deposition (PECVD) process. The effects of R ratio on the material's composition, crystallinity, surface passivation, and contact resistivity are investigated. The poly-SiNx contact exhibits improved surface passivation in comparison with the reference poly-Si without N incorporation. The best double-sided passivated n-type alkaline-polished crystalline silicon wafer with the n-poly-SiNx/SiOx manifests the highest implied open-circuit voltage (iV(oc)) of approximate to 745 mV, with the corresponding single-sided saturated current density of 1.7 fA cm(-2) and the effective lifetime (tau(eff)) of 10 ms at the injection level of approximate to 1 x 10(15) cm(-3). In contrast, the controlled sample with an n-poly-Si/SiOx passivation contact has a maximal iV(oc) of 738 mV. However, the primary drawback of the N doping is to raise the contact resistivity, but which is still in an acceptable range and shows little effect on the performance of solar cell with full-area contact. The proof-of-concept TOPCon solar cell using the n-poly-SiNx/SiOx passivating contact has achieved an efficiency of 23.88%, indicating the potential of the n-poly-SiNx for high-efficiency TOPCon solar cells. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21479]  |
| 专题 | 2021专题_期刊论文 |
| 作者单位 | 1.Zeng, YH 2.Yan, BJ 3.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Inst New Energy Technol, Ningbo 315201, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Yang, Qing,Liu, Zunke,Lin, Yiran,et al. Passivating Contact with Phosphorus-Doped Polycrystalline Silicon-Nitride with an Excellent Implied Open-Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells[J]. SOLAR RRL,2021,5(11). |
| APA | Yang, Qing.,Liu, Zunke.,Lin, Yiran.,Liu, Wei.,Liao, Mingdun.,...&Ye, Jichun.(2021).Passivating Contact with Phosphorus-Doped Polycrystalline Silicon-Nitride with an Excellent Implied Open-Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells.SOLAR RRL,5(11). |
| MLA | Yang, Qing,et al."Passivating Contact with Phosphorus-Doped Polycrystalline Silicon-Nitride with an Excellent Implied Open-Circuit Voltage of 745 mV and Its Application in 23.88% Efficiency TOPCon Solar Cells".SOLAR RRL 5.11(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。