Ga-doped Czochralski silicon with rear p-type polysilicon passivating contact for high-efficiency p-type solar cells
文献类型：期刊论文
| 作者 | Zhi, Yuyan; Zheng, Jingming; Liao, Mingdun; Wang, Wei; Liu, Zunke; Ma, Dian; Feng, Mengmeng; Lu, Linna; Yuan, Shengzhao; Wan, Yimao |
| 刊名 | SOLAR ENERGY MATERIALS AND SOLAR CELLS
 |
| 出版日期 | 2021 |
| 卷号 | 230 |
| 关键词 | LIGHT-INDUCED DEGRADATION CRYSTALLINE SILICON BORON DIFFUSION |
| 英文摘要 | The use of Ga-doped Czochralski (CZ) silicon wafers in Passivated Emitter and Rear Cells (PERC) has been confirmed to have a prominent advantage in suppressing light-induced degradation (LID), which will attract considerable attention for the application of Ga-doped wafers in more efficient photovoltaic devices. In this work, we investigate the passivation quality and address the issue of LID in Ga-doped CZ Si wafers equipped with p-type polysilicon passivating contact that consists of an ultrathin SiOx and a heavily doped polysilicon. We also present the modeling results for solar cells using this type of contact. The experiments show that samples with Ga-doped CZ Si wafers have superior anti-LID properties when compared to the samples with B-doped wafers. An excellent passivation performance with a high implied open-circuit voltage (iV(oc)) of 705 mV and a low singlesided saturation current density (J(0,s)) of 9 fA/cm(2) was achieved. Moreover, with the help of the numerical simulations, we predict that the p-type Ga-doped CZ Si solar cells with p-type polysilicon passivating contacts have the potential to achieve a high efficiency of 23.8%, an similar to 0.5% absolute efficiency improvement over that of PERC solar cells. The results demonstrated in this study suggest that Ga-doped CZ Si wafers combined with p-type polysilicon passivating contacts could resolve the LID issue while maintaining good passivation properties, providing a promising alternative for p-type solar cells in the photovoltaic industry. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21495]  |
| 专题 | 2021专题_期刊论文 |
| 作者单位 | 1.Zeng, YH 2.Yao, MY (corresponding author), Shanghai Univ, Inst Mat, Shanghai 200072, Peoples R China. 3.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Zhi, Yuyan,Zheng, Jingming,Liao, Mingdun,et al. Ga-doped Czochralski silicon with rear p-type polysilicon passivating contact for high-efficiency p-type solar cells[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2021,230. |
| APA | Zhi, Yuyan.,Zheng, Jingming.,Liao, Mingdun.,Wang, Wei.,Liu, Zunke.,...&Ye, Jichun.(2021).Ga-doped Czochralski silicon with rear p-type polysilicon passivating contact for high-efficiency p-type solar cells.SOLAR ENERGY MATERIALS AND SOLAR CELLS,230. |
| MLA | Zhi, Yuyan,et al."Ga-doped Czochralski silicon with rear p-type polysilicon passivating contact for high-efficiency p-type solar cells".SOLAR ENERGY MATERIALS AND SOLAR CELLS 230(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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