Rapid-Thermal-Annealing-Induced Passivation Degradation and Recovery of Polysilicon Passivated Contact with Czochralski and Cast Multicrystalline Silicon Substrates
文献类型：期刊论文
| 作者 | Feng, Mengmeng; Zeng, Yuheng; Yang, Zhenhai; Liao, Mingdun; Zheng, Jingming; Zhi, Yuyan; Lin, Yiran; Lu, Linna; Chen, Huanhuan; Yang, Jie |
| 刊名 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
 |
| 出版日期 | 2021 |
| 卷号 | 218期号:21 |
| 关键词 | SOLAR-CELLS SI LAYER |
| 英文摘要 | Metallization of high-efficiency n-type solar cells with tunnel oxide passivated contact (TOPCon) structures often requires a high-temperature rapid-thermal-annealing (RTA) process, which potentially induces a notable degradation of device performance. Herein, the RTA-induced passivation degradation mechanisms and potential recovery processes are clarified by postthermal annealing or hydrogenation based on both Czochralski (Cz) silicon and cast-multicrystalline (cast-mc) silicon wafers. It is found that the RTA process induces at least two kinds of defects, i.e., thermal-quenching-induced defects and hydrogen-release-induced defects. The passivation quality can be partially recovered under a high-temperature annealing at 820 degrees C, which, however, can be fully restored via a postmoisture/nitrogen hydrogenation treatment at 450 degrees C. In general, the two mentioned wafers, i.e., n-type Cz c-Si and cast-mc silicon substrates, demonstrate similar passivation behaviors in most cases before and after RTA treatment. Finally, it is inferred that the inferior passivation properties of the n-type cast-mc silicon samples are related to the relatively low bulk quality. This can be confirmed by the fact that samples with n-type cast-mc Si substrates show an abnormal passivation behavior with highly effective lifetimes in the low-density carrier region, suggesting the existence of electron trapping states. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21513]  |
| 专题 | 2021专题_期刊论文 |
| 作者单位 | 1.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 2.Hou, HY (corresponding author), Kunming Univ Sci & Technol, Fac Mat Sci & Engn, Kunming 650093, Yunnan, Peoples R China. 3.Zeng, YH 4.Yan, BJ |
| 推荐引用方式 GB/T 7714 | Feng, Mengmeng,Zeng, Yuheng,Yang, Zhenhai,et al. Rapid-Thermal-Annealing-Induced Passivation Degradation and Recovery of Polysilicon Passivated Contact with Czochralski and Cast Multicrystalline Silicon Substrates[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2021,218(21). |
| APA | Feng, Mengmeng.,Zeng, Yuheng.,Yang, Zhenhai.,Liao, Mingdun.,Zheng, Jingming.,...&Ye, Jichun.(2021).Rapid-Thermal-Annealing-Induced Passivation Degradation and Recovery of Polysilicon Passivated Contact with Czochralski and Cast Multicrystalline Silicon Substrates.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,218(21). |
| MLA | Feng, Mengmeng,et al."Rapid-Thermal-Annealing-Induced Passivation Degradation and Recovery of Polysilicon Passivated Contact with Czochralski and Cast Multicrystalline Silicon Substrates".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 218.21(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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