Self-powered ultraviolet photodiode based on lateral polarity structure GaN films
文献类型：期刊论文
| 作者 | Mukhopadhyay, Swarnav; Pal, Hridibrata; Narang, Sameer R.; Guo, Chenyu; Ye, Jichun; Guo, Wei; Sarkar, Biplab |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2021 |
| 卷号 | 39期号:5 |
| 关键词 | UV PHOTODETECTOR JUNCTION |
| 英文摘要 | In this work, we report on a self-powered ultraviolet photodiode realized using lateral polarity structure (LPS) GaN films. The opposite nature of the polarization charge yields different barrier heights at the standard Ni/Au Schottky contact interface of N-polar and III-polar GaN films. As a result, a natural nonzero built-in potential is obtained in the LPS GaN photodiode, which showed photoresponsivity even at 0 V applied bias. The self-powered mechanism inside such an LPS GaN photodiode is discussed in detail by a combination of simulation prediction and experimental validation. Furthermore, a variation in the doping concentration of the adjacent III- and N-polar GaN domain is shown to improve the photoresponsivity compared to the conventional III-polar photodiode. Thus, this work validates that the LPS GaN photodiode is a promising candidate to realize self-powered operation and a general design rule for the photodiode with in-plane built-in potential. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21533]  |
| 专题 | 2021专题_期刊论文 |
| 作者单位 | Sarkar, B (corresponding author), Indian Inst Technol, Dept Elect & Commun Engn, Roorkee 247667, Uttarakhand, India. |
| 推荐引用方式 GB/T 7714 | Mukhopadhyay, Swarnav,Pal, Hridibrata,Narang, Sameer R.,et al. Self-powered ultraviolet photodiode based on lateral polarity structure GaN films[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2021,39(5). |
| APA | Mukhopadhyay, Swarnav.,Pal, Hridibrata.,Narang, Sameer R..,Guo, Chenyu.,Ye, Jichun.,...&Sarkar, Biplab.(2021).Self-powered ultraviolet photodiode based on lateral polarity structure GaN films.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,39(5). |
| MLA | Mukhopadhyay, Swarnav,et al."Self-powered ultraviolet photodiode based on lateral polarity structure GaN films".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 39.5(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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