中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at very high temperature

文献类型:期刊论文

作者Fanbing Hu;  Lina Cheng;  Shuyao Fan;  Xufeng;  Yong Liang;  Minghui Liu;  Wen Wang
出版日期2021
卷号333期号:页码:113298
ISSN号0924-4247
其他题名Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at very high temperature
源URL[http://159.226.59.140/handle/311008/9853]  
专题历年期刊论文_2021年期刊论文
作者单位中国科学院声学研究所
推荐引用方式
GB/T 7714
Fanbing Hu;Lina Cheng;Shuyao Fan;Xufeng;Yong Liang;Minghui Liu;Wen Wang. Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at very high temperature[J],2021,333(无):113298.
APA Fanbing Hu;Lina Cheng;Shuyao Fan;Xufeng;Yong Liang;Minghui Liu;Wen Wang.(2021).Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at very high temperature.,333(无),113298.
MLA Fanbing Hu;Lina Cheng;Shuyao Fan;Xufeng;Yong Liang;Minghui Liu;Wen Wang."Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at very high temperature".333.无(2021):113298.

入库方式: OAI收割

来源:声学研究所

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