Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at very high temperature
文献类型:期刊论文
作者 | Fanbing Hu; Lina Cheng; Shuyao Fan; Xufeng; Yong Liang; Minghui Liu; Wen Wang |
出版日期 | 2021 |
卷号 | 333期号:无页码:113298 |
ISSN号 | 0924-4247 |
其他题名 | Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at very high temperature |
源URL | [http://159.226.59.140/handle/311008/9853] ![]() |
专题 | 历年期刊论文_2021年期刊论文 |
作者单位 | 中国科学院声学研究所 |
推荐引用方式 GB/T 7714 | Fanbing Hu;Lina Cheng;Shuyao Fan;Xufeng;Yong Liang;Minghui Liu;Wen Wang. Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at very high temperature[J],2021,333(无):113298. |
APA | Fanbing Hu;Lina Cheng;Shuyao Fan;Xufeng;Yong Liang;Minghui Liu;Wen Wang.(2021).Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at very high temperature.,333(无),113298. |
MLA | Fanbing Hu;Lina Cheng;Shuyao Fan;Xufeng;Yong Liang;Minghui Liu;Wen Wang."Chip-level orthometric surface acoustic wave device with AlN/metal/Si multilayer structure for sensing strain at very high temperature".333.无(2021):113298. |
入库方式: OAI收割
来源:声学研究所
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