Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity
文献类型：期刊论文
| 作者 | Tang, Lei3,4; Teng, Changjiu3,4; Xu, Runzhang3,4; Zhang, Zehao3,4; Khan, Usman3,4; Zhang, Rongjie3,4; Luo, Yuting3,4; Nong, Huiyu3,4; Liu, Bilu3,4; Cheng, Hui-Ming1,2,3,4 |
| 刊名 | ACS NANO
 |
| 出版日期 | 2022-08-23 |
| 卷号 | 16期号:8页码:12318-12327 |
| ISSN号 | 1936-0851 |
| 关键词 | vertical composition gradient transition metal dichalcogenides chemical vapor deposition wafer-scale artificial synapses device array linearity |
| DOI | 10.1021/acsnano.2c03263 |
| 通讯作者 | Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn) |
| 英文摘要 | Artificial synapses are promising for dealing with large amounts of data computing. Great progress has been made recently in terms of improving the on/off current ratio, the number of states, and the energy efficiency of synapse devices. However, the nonlinear weight update behavior of a synapse caused by the uncertain direction of the conductive filament leads to complex weight modulation, which degrades the delivery accuracy of information. Here we propose a strategy to improve the weight update behavior of synapses using chemical-vapor-deposition -grown transition metal dichalcogenides (TMDCs) with a vertical composition gradient, where the sulfur concentration decreases gradually along the thickness direction of TMDCs and thus forms a certain direction of the conduction filament for synapse devices. It is worth noting that the devices show an excellent linear conductance of potentiation and depression with a high linearity of 0.994 (surpassing most state-of-the-art synapses), have a large number of states, and are able to fabricate synapse arrays with wafer-scale. Furthermore, the devices based on the TMDCs with the vertical composition gradient exhibit an asymmetric feature of potentiation and depression behaviors with high linearity and follow the simulated linear Leaky ReLU function, resulting in a high recognition accuracy of 94.73%, which overcomes the unreliability issue in the Sigmoid function due to the vanishing gradient phenomenon. This study not only provides a universal method to grow TMDCs with a vertical composition gradient but also contributes to exploring highly linear synapses toward neuromorphic computing. |
| 资助项目 | National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[52188101] ; National Science Fund for Distinguished Young Scholars[52125309] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project[201901171523] ; Shenzhen Basic Research Program[JCYJ20200109144616617] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| 出版者 | AMER CHEMICAL SOC |
| WOS记录号 | WOS:000848309900001 |
| 资助机构 | National Natural Science Foundation of China ; National Science Fund for Distinguished Young Scholars ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project ; Shenzhen Basic Research Program |
| 源URL | [http://ir.imr.ac.cn/handle/321006/175058]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, Bilu; Cheng, Hui-Ming |
| 作者单位 | 1.Chinese Acad Sci, Shenzhen Inst Adv Technol, Inst Technol Carbon Neutral, Fac Mat & Engn, Shenzhen 518055, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Tsinghua Univ, Inst Mat Res, Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 4.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tang, Lei,Teng, Changjiu,Xu, Runzhang,et al. Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity[J]. ACS NANO,2022,16(8):12318-12327. |
| APA | Tang, Lei.,Teng, Changjiu.,Xu, Runzhang.,Zhang, Zehao.,Khan, Usman.,...&Cheng, Hui-Ming.(2022).Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity.ACS NANO,16(8),12318-12327. |
| MLA | Tang, Lei,et al."Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity".ACS NANO 16.8(2022):12318-12327. |
入库方式： OAI收割
来源：金属研究所
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