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The High Photoresponse of Stress-Tuned MoTe2 Optoelectronic Devices in the Telecommunication Band

文献类型：期刊论文

作者Ye, Guangping3; Xiong, Wen2; Xie, Yiqun1; Gong, Lele3
刊名PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
出版日期2022-08-19
页码6
关键词biaxial stress monolayer MoTe2 photocurrent photogalvanic effect telecommunication bands
ISSN号1862-6254
DOI10.1002/pssr.202200276
通讯作者Xiong, Wen(xiongwen@cigit.ac.cn) ; Xie, Yiqun(yqxie@shnu.edu.cn)
英文摘要There are attractive prospects to achieve large photocurrent and high optical response in telecommunication wavelengths for optoelectronic devices. Inspired by the recent experiment [Nat. Photonics 2020, 14, 578], the photocurrent of the devices composed of noncentral inversion symmetric monolayer MoTe2 along the armchair direction under different linearly polarized light by the quantum transport calculation is investigated. The results demonstrate that the maximum photocurrent will increase under the biaxial tensile stress, and importantly, the peak of photocurrent will move toward the direction of lower photon energy owing to the reduction of the bandgap of monolayer MoTe2, which is opposite to the case of applying the bias voltage. Ultimately, it is proved that monolayer MoTe2 devices with large photoresponse can be tuned to the interesting telecommunication band via the imposition of biaxial stress and bias voltage, which makes the devices have potential applications in the field of silicon photonics.
资助项目National Natural Science Foundation of China[62074021] ; National Natural Science Foundation of China[51871156] ; Natural Science Foundation Project of CQ CSTC[cstc2020jcyj-msxmX0822]
WOS研究方向Materials Science ; Physics
语种英语
WOS记录号WOS:000842332300001
出版者WILEY-V C H VERLAG GMBH
源URL[http://119.78.100.138/handle/2HOD01W0/16450]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Xiong, Wen; Xie, Yiqun
作者单位1.Shanghai Normal Univ, Dept Phys, Shanghai 200232, Peoples R China
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
3.Chongqing Univ, Dept Phys, Chongqing 401331, Peoples R China
推荐引用方式
GB/T 7714		 Ye, Guangping,Xiong, Wen,Xie, Yiqun,et al. The High Photoresponse of Stress-Tuned MoTe2 Optoelectronic Devices in the Telecommunication Band[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2022:6.
APA Ye, Guangping,Xiong, Wen,Xie, Yiqun,&Gong, Lele.(2022).The High Photoresponse of Stress-Tuned MoTe2 Optoelectronic Devices in the Telecommunication Band.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,6.
MLA Ye, Guangping,et al."The High Photoresponse of Stress-Tuned MoTe2 Optoelectronic Devices in the Telecommunication Band".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2022):6.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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