Above-room Curie temperature and barrier-layer-dependent tunneling magnetoresistance in 1T-CrO2 monolayer based magnetic tunnel junctions
文献类型：期刊论文
| 作者 | Liu, Jie4; Tang, Huan4; Gan, Min4; Chen, Hong4; Shi, Xuan2,3 ; Yuan, Hongkuan1,4
|
| 刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
 |
| 出版日期 | 2022-08-12 |
| 页码 | 9 |
| ISSN号 | 1463-9076 |
| DOI | 10.1039/d2cp01924h |
| 通讯作者 | Shi, Xuan(shixuan@cigit.ac.cn) ; Yuan, Hongkuan(yhk10@swu.edu.cn) |
| 英文摘要 | van der Waals (vdW) heterostructures based on two-dimensional (2D) ferromagnetic materials hold great potential applications in spintronics. Using the density functional theory (DFT) method and first-principles quantum transport simulation, we studied the structures, magnetic properties and spin-resolved transport of 1T-CrO2 monolayer (ML) based vdW magnetic tunnel junctions (MTJs). Owing to a high Curie temperature (T-C) of 392 K and a moderate magnetic anisotropy energy (MAE) of 94 mu eV of the ferromagnetic 1T-CrO2 monolayer, Cu(111)|CrO2|nML-Gr|CrO2|Cu(111) MTJs were built. Our results reveal that their tunneling magnetoresistance (TMR) ratios are dependent on the number of Gr barrier layers within a working bias voltage of 1 V. For the thin barrier layers (n = 1-2), the maintained TMR ratios can reach a giant value of about 1 x 10(4)%, while there appears a decreasing trend with the increasing bias voltage for thick Gr layers (n = 3-5). The barrier-layer-dependent phenomenon is attributed to the decreasing transmission magnitude with increasing bias voltage in a parallel configuration (PC), which is as small as that in an anti-parallel configuration (APC) eventually. Our results would provide some guidance for future experimental fabrications of these 2D materials based MTJs. |
| 资助项目 | Natural Science Foundation of Chongqing[CSTC2021jcyj-msxm1946] ; Natural Science Foundation of Chongqing[cstc2022ycjh-bgzxm0127] ; National Natural Science Foundation of China[11874306] ; National Natural Science Foundation of China[12174320] |
| WOS研究方向 | Chemistry ; Physics |
| 语种 | 英语 |
| 出版者 | ROYAL SOC CHEMISTRY |
| WOS记录号 | WOS:000850529400001 |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/16506]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Shi, Xuan; Yuan, Hongkuan |
| 作者单位 | 1.Chongqing Key Lab Micro&Nano Struct Optoelect, Chongqing 400715, Peoples R China 2.Univ Chinese Acad Sci, Coll Artificial Intelligence, Chongqing Sch, Chongqing 400714, Peoples R China 3.Chinese Acad Sci, Ctr Quantum Informat Technol, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 4.Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Jie,Tang, Huan,Gan, Min,et al. Above-room Curie temperature and barrier-layer-dependent tunneling magnetoresistance in 1T-CrO2 monolayer based magnetic tunnel junctions[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2022:9. |
| APA | Liu, Jie,Tang, Huan,Gan, Min,Chen, Hong,Shi, Xuan,&Yuan, Hongkuan.(2022).Above-room Curie temperature and barrier-layer-dependent tunneling magnetoresistance in 1T-CrO2 monolayer based magnetic tunnel junctions.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,9. |
| MLA | Liu, Jie,et al."Above-room Curie temperature and barrier-layer-dependent tunneling magnetoresistance in 1T-CrO2 monolayer based magnetic tunnel junctions".PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2022):9. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。