The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT
文献类型：期刊论文
| 作者 | Niu, Di; Wang, Quan; Li, Wei; Chen, Changxi; Xu, Jiankai; Jiang, Lijuan; Feng, Chun; Xiao, Hongling; Wang, Qian; Xu, Xiangang; Wang, Xiaoliang |
| 刊名 | MICROMACHINES
 |
| 出版日期 | 2021 |
| 卷号 | 12期号:2页码:131 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31386]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Niu, Di; Wang, Quan; Li, Wei; Chen, Changxi; Xu, Jiankai; Jiang, Lijuan; Feng, Chun; Xiao, Hongling; Wang, Qian; Xu, Xiangang; Wang, Xiaoliang. The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT[J]. MICROMACHINES,2021,12(2):131. |
| APA | Niu, Di; Wang, Quan; Li, Wei; Chen, Changxi; Xu, Jiankai; Jiang, Lijuan; Feng, Chun; Xiao, Hongling; Wang, Qian; Xu, Xiangang; Wang, Xiaoliang.(2021).The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT.MICROMACHINES,12(2),131. |
| MLA | Niu, Di; Wang, Quan; Li, Wei; Chen, Changxi; Xu, Jiankai; Jiang, Lijuan; Feng, Chun; Xiao, Hongling; Wang, Qian; Xu, Xiangang; Wang, Xiaoliang."The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT".MICROMACHINES 12.2(2021):131. |
入库方式： OAI收割
来源：半导体研究所
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