All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates
文献类型：期刊论文
| 作者 | Yang, Junjie; Liu, Zizhuo; Jurczak, Pamela; Tang, Mingchu; Li, Keshuang; Pan, Shujie; Sanchez, Ana; Beanland, Richard; Zhang, Jin-Chuan; Wang, Huan; Liu, Fengqi; Li, Zhibo; Shutts, Samuel; Smowton, Peter; Chen, Siming; Seeds, Alwyn; Liu, Huiyun |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2021 |
| 卷号 | 54期号:3页码:35103 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31407]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Yang, Junjie; Liu, Zizhuo; Jurczak, Pamela; Tang, Mingchu; Li, Keshuang; Pan, Shujie; Sanchez, Ana; Beanland, Richard; Zhang, Jin-Chuan; Wang, Huan; Liu, Fengqi; Li, Zhibo; Shutts, Samuel; Smowton, Peter; Chen, Siming; Seeds, Alwyn; Liu, Huiyun. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(3):35103. |
| APA | Yang, Junjie; Liu, Zizhuo; Jurczak, Pamela; Tang, Mingchu; Li, Keshuang; Pan, Shujie; Sanchez, Ana; Beanland, Richard; Zhang, Jin-Chuan; Wang, Huan; Liu, Fengqi; Li, Zhibo; Shutts, Samuel; Smowton, Peter; Chen, Siming; Seeds, Alwyn; Liu, Huiyun.(2021).All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates.JOURNAL OF PHYSICS D-APPLIED PHYSICS,54(3),35103. |
| MLA | Yang, Junjie; Liu, Zizhuo; Jurczak, Pamela; Tang, Mingchu; Li, Keshuang; Pan, Shujie; Sanchez, Ana; Beanland, Richard; Zhang, Jin-Chuan; Wang, Huan; Liu, Fengqi; Li, Zhibo; Shutts, Samuel; Smowton, Peter; Chen, Siming; Seeds, Alwyn; Liu, Huiyun."All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates".JOURNAL OF PHYSICS D-APPLIED PHYSICS 54.3(2021):35103. |
入库方式： OAI收割
来源：半导体研究所
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