Room Temperature 2DEG Mobility Above 2350 cm(2)/V center dot s in AlGaN/GaN HEMT Grown on GaN Substrate
文献类型：期刊论文
| 作者 | Chu, Jiayan; Wang, Quan; Jiang, Lijuan; Feng, Chun; Li, Wei; Liu, Hongxin; Xiao, Hongling; Wang, Xiaoliang |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 50期号:5页码:2630-2636 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31417]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Chu, Jiayan; Wang, Quan; Jiang, Lijuan; Feng, Chun; Li, Wei; Liu, Hongxin; Xiao, Hongling; Wang, Xiaoliang. Room Temperature 2DEG Mobility Above 2350 cm(2)/V center dot s in AlGaN/GaN HEMT Grown on GaN Substrate[J]. JOURNAL OF ELECTRONIC MATERIALS,2021,50(5):2630-2636. |
| APA | Chu, Jiayan; Wang, Quan; Jiang, Lijuan; Feng, Chun; Li, Wei; Liu, Hongxin; Xiao, Hongling; Wang, Xiaoliang.(2021).Room Temperature 2DEG Mobility Above 2350 cm(2)/V center dot s in AlGaN/GaN HEMT Grown on GaN Substrate.JOURNAL OF ELECTRONIC MATERIALS,50(5),2630-2636. |
| MLA | Chu, Jiayan; Wang, Quan; Jiang, Lijuan; Feng, Chun; Li, Wei; Liu, Hongxin; Xiao, Hongling; Wang, Xiaoliang."Room Temperature 2DEG Mobility Above 2350 cm(2)/V center dot s in AlGaN/GaN HEMT Grown on GaN Substrate".JOURNAL OF ELECTRONIC MATERIALS 50.5(2021):2630-2636. |
入库方式： OAI收割
来源：半导体研究所
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