Stable Terahertz In Situ Photo-Writable Electrically Erasable Memory with a CsPbI3:Ag/SnO2/PEDOT:PSS Hybrid Structure
文献类型：期刊论文
| 作者 | Liu, Bin; Liu, Jingyu; Lv, Longfeng; Hou, Yanbing; Shen, Jingling; Zhang, Bo |
| 刊名 | ACS APPLIED ELECTRONIC MATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 3期号:2页码:1006-1014 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31418]  |
| 专题 | 半导体研究所_纳米光电子实验室 |
| 推荐引用方式 GB/T 7714 | Liu, Bin; Liu, Jingyu; Lv, Longfeng; Hou, Yanbing; Shen, Jingling; Zhang, Bo. Stable Terahertz In Situ Photo-Writable Electrically Erasable Memory with a CsPbI3:Ag/SnO2/PEDOT:PSS Hybrid Structure[J]. ACS APPLIED ELECTRONIC MATERIALS,2021,3(2):1006-1014. |
| APA | Liu, Bin; Liu, Jingyu; Lv, Longfeng; Hou, Yanbing; Shen, Jingling; Zhang, Bo.(2021).Stable Terahertz In Situ Photo-Writable Electrically Erasable Memory with a CsPbI3:Ag/SnO2/PEDOT:PSS Hybrid Structure.ACS APPLIED ELECTRONIC MATERIALS,3(2),1006-1014. |
| MLA | Liu, Bin; Liu, Jingyu; Lv, Longfeng; Hou, Yanbing; Shen, Jingling; Zhang, Bo."Stable Terahertz In Situ Photo-Writable Electrically Erasable Memory with a CsPbI3:Ag/SnO2/PEDOT:PSS Hybrid Structure".ACS APPLIED ELECTRONIC MATERIALS 3.2(2021):1006-1014. |
入库方式： OAI收割
来源：半导体研究所
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