Giant circular photogalvanic effect of the surface states in an ultra-thin Bi2Se3 nanoplate grown by chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhuang, Hang; Yu, Jinling; Chen, Lei; Gu, Peng; Chen, Yonghai; Liu, Yu; Yin, Chunming; Lai, Yunfeng; Cheng, Shuying |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2021 |
| 卷号 | 129期号:10页码:105303 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31423]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhuang, Hang; Yu, Jinling; Chen, Lei; Gu, Peng; Chen, Yonghai; Liu, Yu; Yin, Chunming; Lai, Yunfeng; Cheng, Shuying. Giant circular photogalvanic effect of the surface states in an ultra-thin Bi2Se3 nanoplate grown by chemical vapor deposition[J]. JOURNAL OF APPLIED PHYSICS,2021,129(10):105303. |
| APA | Zhuang, Hang; Yu, Jinling; Chen, Lei; Gu, Peng; Chen, Yonghai; Liu, Yu; Yin, Chunming; Lai, Yunfeng; Cheng, Shuying.(2021).Giant circular photogalvanic effect of the surface states in an ultra-thin Bi2Se3 nanoplate grown by chemical vapor deposition.JOURNAL OF APPLIED PHYSICS,129(10),105303. |
| MLA | Zhuang, Hang; Yu, Jinling; Chen, Lei; Gu, Peng; Chen, Yonghai; Liu, Yu; Yin, Chunming; Lai, Yunfeng; Cheng, Shuying."Giant circular photogalvanic effect of the surface states in an ultra-thin Bi2Se3 nanoplate grown by chemical vapor deposition".JOURNAL OF APPLIED PHYSICS 129.10(2021):105303. |
入库方式： OAI收割
来源：半导体研究所
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