The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) beta-Ga2O3 Substrate for Vertical Light Emitting Diodes
文献类型：期刊论文
| 作者 | Zhao, Jie; Li, Weijiang; Wang, Lulu; Wei, Xuecheng; Wang, Junxi; Wei, Tongbo |
| 刊名 | PHOTONICS
 |
| 出版日期 | 2021 |
| 卷号 | 8期号:2页码:42 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31399]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Zhao, Jie; Li, Weijiang; Wang, Lulu; Wei, Xuecheng; Wang, Junxi; Wei, Tongbo. The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) beta-Ga2O3 Substrate for Vertical Light Emitting Diodes[J]. PHOTONICS,2021,8(2):42. |
| APA | Zhao, Jie; Li, Weijiang; Wang, Lulu; Wei, Xuecheng; Wang, Junxi; Wei, Tongbo.(2021).The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) beta-Ga2O3 Substrate for Vertical Light Emitting Diodes.PHOTONICS,8(2),42. |
| MLA | Zhao, Jie; Li, Weijiang; Wang, Lulu; Wei, Xuecheng; Wang, Junxi; Wei, Tongbo."The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) beta-Ga2O3 Substrate for Vertical Light Emitting Diodes".PHOTONICS 8.2(2021):42. |
入库方式： OAI收割
来源：半导体研究所
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