First-Principles Study of Intrinsic Point Defects of Monolayer GeS
文献类型:期刊论文
作者 | Qiu, Chen; Cao, Ruyue; Zhang, Cai-Xin; Zhang, Chen; Guo, Dan; Shen, Tao; Liu, Zhu-You; Hu, Yu-Ying; Wang, Fei; Deng, Hui-Xiong |
刊名 | CHINESE PHYSICS LETTERS |
出版日期 | 2021 |
卷号 | 38期号:2页码:26103 |
源URL | [http://ir.semi.ac.cn/handle/172111/31387] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Qiu, Chen; Cao, Ruyue; Zhang, Cai-Xin; Zhang, Chen; Guo, Dan; Shen, Tao; Liu, Zhu-You; Hu, Yu-Ying; Wang, Fei; Deng, Hui-Xiong. First-Principles Study of Intrinsic Point Defects of Monolayer GeS[J]. CHINESE PHYSICS LETTERS,2021,38(2):26103. |
APA | Qiu, Chen; Cao, Ruyue; Zhang, Cai-Xin; Zhang, Chen; Guo, Dan; Shen, Tao; Liu, Zhu-You; Hu, Yu-Ying; Wang, Fei; Deng, Hui-Xiong.(2021).First-Principles Study of Intrinsic Point Defects of Monolayer GeS.CHINESE PHYSICS LETTERS,38(2),26103. |
MLA | Qiu, Chen; Cao, Ruyue; Zhang, Cai-Xin; Zhang, Chen; Guo, Dan; Shen, Tao; Liu, Zhu-You; Hu, Yu-Ying; Wang, Fei; Deng, Hui-Xiong."First-Principles Study of Intrinsic Point Defects of Monolayer GeS".CHINESE PHYSICS LETTERS 38.2(2021):26103. |
入库方式: OAI收割
来源:半导体研究所
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