中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
First-Principles Study of Intrinsic Point Defects of Monolayer GeS

文献类型:期刊论文

作者Qiu, Chen;   Cao, Ruyue;   Zhang, Cai-Xin;   Zhang, Chen;   Guo, Dan;   Shen, Tao;   Liu, Zhu-You;   Hu, Yu-Ying;   Wang, Fei;   Deng, Hui-Xiong
刊名CHINESE PHYSICS LETTERS
出版日期2021
卷号38期号:2页码:26103
源URL[http://ir.semi.ac.cn/handle/172111/31387]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Qiu, Chen; Cao, Ruyue; Zhang, Cai-Xin; Zhang, Chen; Guo, Dan; Shen, Tao; Liu, Zhu-You; Hu, Yu-Ying; Wang, Fei; Deng, Hui-Xiong. First-Principles Study of Intrinsic Point Defects of Monolayer GeS[J]. CHINESE PHYSICS LETTERS,2021,38(2):26103.
APA Qiu, Chen; Cao, Ruyue; Zhang, Cai-Xin; Zhang, Chen; Guo, Dan; Shen, Tao; Liu, Zhu-You; Hu, Yu-Ying; Wang, Fei; Deng, Hui-Xiong.(2021).First-Principles Study of Intrinsic Point Defects of Monolayer GeS.CHINESE PHYSICS LETTERS,38(2),26103.
MLA Qiu, Chen; Cao, Ruyue; Zhang, Cai-Xin; Zhang, Chen; Guo, Dan; Shen, Tao; Liu, Zhu-You; Hu, Yu-Ying; Wang, Fei; Deng, Hui-Xiong."First-Principles Study of Intrinsic Point Defects of Monolayer GeS".CHINESE PHYSICS LETTERS 38.2(2021):26103.

入库方式: OAI收割

来源:半导体研究所

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