Growth and photo-electronic characteristics of short/mid wave dual-band infrared detectors based on GaSb bulk and InAs/GaSb superlattices
文献类型：期刊论文
| 作者 | Ma, Xiaole; Guo, Jie; Hao, Ruiting; Wei, Guoshuai; Chang, Faran; Li, Yong; Li, Xiaoming; Jiang, Dongwei; Wang, Guowei; Xu, Yingqiang; Niu, Zhichuan |
| 刊名 | OPTICAL MATERIALS EXPRESS
 |
| 出版日期 | 2021 |
| 卷号 | 11期号:2页码:585-591 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31385]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Ma, Xiaole; Guo, Jie; Hao, Ruiting; Wei, Guoshuai; Chang, Faran; Li, Yong; Li, Xiaoming; Jiang, Dongwei; Wang, Guowei; Xu, Yingqiang; Niu, Zhichuan. Growth and photo-electronic characteristics of short/mid wave dual-band infrared detectors based on GaSb bulk and InAs/GaSb superlattices[J]. OPTICAL MATERIALS EXPRESS,2021,11(2):585-591. |
| APA | Ma, Xiaole; Guo, Jie; Hao, Ruiting; Wei, Guoshuai; Chang, Faran; Li, Yong; Li, Xiaoming; Jiang, Dongwei; Wang, Guowei; Xu, Yingqiang; Niu, Zhichuan.(2021).Growth and photo-electronic characteristics of short/mid wave dual-band infrared detectors based on GaSb bulk and InAs/GaSb superlattices.OPTICAL MATERIALS EXPRESS,11(2),585-591. |
| MLA | Ma, Xiaole; Guo, Jie; Hao, Ruiting; Wei, Guoshuai; Chang, Faran; Li, Yong; Li, Xiaoming; Jiang, Dongwei; Wang, Guowei; Xu, Yingqiang; Niu, Zhichuan."Growth and photo-electronic characteristics of short/mid wave dual-band infrared detectors based on GaSb bulk and InAs/GaSb superlattices".OPTICAL MATERIALS EXPRESS 11.2(2021):585-591. |
入库方式： OAI收割
来源：半导体研究所
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