Nondegenerate P-Type In-Doped SnS2 Monolayer Transistor
文献类型：期刊论文
| 作者 | Li, Zhaocheng; Shu, Weining; Li, Qiuqiu; Xu, Weiting; Zhang, Zhengwei; Li, Jia; Wang, Yiliu; Liu, Yueyang; Yang, Juehan; Chen, Keqiu; Duan, Xidong; Wei, Zhongming; Li, Bo |
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 7期号:7页码:2001168 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31422]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Li, Zhaocheng; Shu, Weining; Li, Qiuqiu; Xu, Weiting; Zhang, Zhengwei; Li, Jia; Wang, Yiliu; Liu, Yueyang; Yang, Juehan; Chen, Keqiu; Duan, Xidong; Wei, Zhongming; Li, Bo. Nondegenerate P-Type In-Doped SnS2 Monolayer Transistor[J]. ADVANCED ELECTRONIC MATERIALS,2021,7(7):2001168. |
| APA | Li, Zhaocheng; Shu, Weining; Li, Qiuqiu; Xu, Weiting; Zhang, Zhengwei; Li, Jia; Wang, Yiliu; Liu, Yueyang; Yang, Juehan; Chen, Keqiu; Duan, Xidong; Wei, Zhongming; Li, Bo.(2021).Nondegenerate P-Type In-Doped SnS2 Monolayer Transistor.ADVANCED ELECTRONIC MATERIALS,7(7),2001168. |
| MLA | Li, Zhaocheng; Shu, Weining; Li, Qiuqiu; Xu, Weiting; Zhang, Zhengwei; Li, Jia; Wang, Yiliu; Liu, Yueyang; Yang, Juehan; Chen, Keqiu; Duan, Xidong; Wei, Zhongming; Li, Bo."Nondegenerate P-Type In-Doped SnS2 Monolayer Transistor".ADVANCED ELECTRONIC MATERIALS 7.7(2021):2001168. |
入库方式： OAI收割
来源：半导体研究所
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