中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm

文献类型:期刊论文

AuthorZhao, Yuliang3,4; Yang, Guowen3,4; Zhao, Yongming2; Tang, Song2; Lan, Yu3,4; Liu, Yuxian3,4; Wang, Zhenfu4; Demir, Abdullah1
SourceIEEE PHOTONICS JOURNAL
Issued Date2022-12
Volume14Issue:6
KeywordEpitaxial growth Resistance Doping Optical losses Optical device fabrication Stacking Optical refraction Epitaxial stacking high efficiency laser diode low optical loss n-doping concentration power scaling specific resistance tunnel junction
ISSN1943-0655;1943-0647
DOI10.1109/JPHOT.2022.3211964
Rank1
English Abstract

We report on studying tunnel junctions and an optical cavity structure for developing epitaxially-stacked high-efficiency 905 nm high-power laser diodes. The GaAs tunnel junctions were explored via simulations and experiments to realize a high peak current density of 7.7 x 10(4) A/cm(2) and a low specific resistance of 1.5 x 10(-5) omega cm(2) with a high n-doping concentration of 6 x 10(19) cm(-3). Employing a low-loss epitaxial structure design, single-, double-, and triple-cavity structure laser diodes demonstrated power scaling by epitaxial stacking. Triple-cavity laser diodes have a low optical loss (0.42 cm(-1)) and generate a peak power of 83 W with a short cavity length of 750 mu m at a limited current of 30 A.

Language英语
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS IDWOS:000870286800003
源URL[http://ir.opt.ac.cn/handle/181661/96203]  
Collection西安光学精密机械研究所_瞬态光学技术国家重点实验室
Corresponding AuthorYang, Guowen
Affiliation1.Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
2.Dogain Laser Technol Suzhou Co Ltd, Suzhou 215123, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China
Recommended Citation
GB/T 7714
Zhao, Yuliang,Yang, Guowen,Zhao, Yongming,et al. Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm[J]. IEEE PHOTONICS JOURNAL,2022,14(6).
APA Zhao, Yuliang.,Yang, Guowen.,Zhao, Yongming.,Tang, Song.,Lan, Yu.,...&Demir, Abdullah.(2022).Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm.IEEE PHOTONICS JOURNAL,14(6).
MLA Zhao, Yuliang,et al."Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm".IEEE PHOTONICS JOURNAL 14.6(2022).

入库方式: OAI收割

来源:西安光学精密机械研究所

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