Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors
文献类型：期刊论文
| 作者 | Ji, Dong ; Lu, Yanwu ; Liu, Bing ; Liu, Guipeng ; Zhu, Qinsheng ; Wang, Zhanguo |
| 刊名 | solid state communications
 |
| 出版日期 | 2013 |
| 卷号 | 153期号:1页码:53-57 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-10-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24439]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Ji, Dong,Lu, Yanwu,Liu, Bing,et al. Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors[J]. solid state communications,2013,153(1):53-57. |
| APA | Ji, Dong,Lu, Yanwu,Liu, Bing,Liu, Guipeng,Zhu, Qinsheng,&Wang, Zhanguo.(2013).Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors.solid state communications,153(1),53-57. |
| MLA | Ji, Dong,et al."Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors".solid state communications 153.1(2013):53-57. |
入库方式： OAI收割
来源：半导体研究所
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