Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping
文献类型：期刊论文
| ; | |
| 作者 | Wang, Liancheng; Zhang, Yiyun; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong |
| 刊名 | rsc advances
 ; RSC ADVANCES
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 3期号:10页码:3359-3364 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-10-10 ; 2013-10-10 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24432]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Wang, Liancheng,Zhang, Yiyun,Guo, Enqing,et al. Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping, Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping[J]. rsc advances, RSC ADVANCES,2013, 2013,3, 3(10):3359-3364, 3359-3364. |
| APA | Wang, Liancheng,Zhang, Yiyun,Guo, Enqing,Liu, Zhiqiang,Yi, Xiaoyan,&Wang, Guohong.(2013).Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping.rsc advances,3(10),3359-3364. |
| MLA | Wang, Liancheng,et al."Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping".rsc advances 3.10(2013):3359-3364. |
入库方式： OAI收割
来源：半导体研究所
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