An ultra-high gain single-photon transistor in the microwave regime
文献类型：期刊论文
| 作者 | Zhiling Wang2 ; Zenghui Bao2; Yan Li2; Yukai Wu2; Weizhou Cai2; Weiting Wang2; Xiyue Han2; Jiahui Wang2; Yipu Song2; Luyan Sun2
|
| 刊名 | Nature Communications
 |
| 卷号 | 13 |
| ISSN号 | 2041-1723 |
| 英文摘要 | A photonic transistor that can switch or amplify an optical signal with a single gate photon requires strong non-linear interaction at the single-photon level. Circuit quantum electrodynamics provides great flexibility to generate such an interaction, and thus could serve as an effective platform to realize a high-performance single-photon transistor. Here we demonstrate such a photonic transistor in the microwave regime. Our device consists of two microwave cavities dispersively coupled to a superconducting qubit. A single gate photon imprints a phase shift on the qubit state through one cavity, and further shifts the resonance frequency of the other cavity. In this way, we realize a gain of the transistor up to 53.4 dB, with an extinction ratio better than 20 dB. Our device outperforms previous devices in the optical regime by several orders in terms of optical gain, which indicates a great potential for application in the field of microwave quantum photonics and quantum information processing. |
| 语种 | 英语 |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/128915]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 作者单位 | 1.中国科学院合肥物质科学研究院 2.清华大学 |
| 推荐引用方式 GB/T 7714 | Zhiling Wang,Zenghui Bao,Yan Li,et al. An ultra-high gain single-photon transistor in the microwave regime[J]. Nature Communications,13. |
| APA | Zhiling Wang.,Zenghui Bao.,Yan Li.,Yukai Wu.,Weizhou Cai.,...&Luming Duan. |
| MLA | Zhiling Wang,et al."An ultra-high gain single-photon transistor in the microwave regime".Nature Communications 13 |
入库方式： OAI收割
来源：合肥物质科学研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。