Growth and properties of Pr3+-doped NaGd(MoO4)2 single crystal: A promising InGaN laser-diode pumped orange-red laser crystal
文献类型:期刊论文
作者 | Ren, Hao2; Li, Hongyuan2; Zou, Yong2; Deng, Hengyang2; Peng, Ziming2; Ma, Tao2; Ding, Shoujun1,2,3 |
刊名 | JOURNAL OF LUMINESCENCE |
出版日期 | 2022-09-01 |
卷号 | 249 |
ISSN号 | 0022-2313 |
关键词 | Czochralski method Spectroscopic properties InGaN laser-diodes Orange-red lasers Pr NaGd(MoO4)2 |
DOI | 10.1016/j.jlumin.2022.119034 |
通讯作者 | Zou, Yong(yongzou@ahut.edu.cn) ; Ding, Shoujun(sjding@ahut.edu.cn) |
英文摘要 | Trivalent praseodymium (Pr3+) doped materials have received widely attentions due to their promising prospects for InGaN laser-diodes pumped visible lasers. In this work, a 2 at.% Pr3+ doped oxide crystal, Pr:NaGd(MoO4)2 crystal, was grown successfully by Czochralski method. The color of the crystal changes from black to green after annealing in air atmosphere. The structure of the crystal before and after annealing were characterized by powder X-ray diffraction. Then, Rietveld refinement method was performed to the X-ray diffraction data to determine the lattice parameters of the crystal. The structure of the crystal was further confirmed by Raman scattering spectrum. The spectroscopic properties of the crystal, including absorption and fluorescence spectra, were characterized and discussed. In visible range, the crystal has a strongest absorption band with center at 450 nm, which is well matched with the output wavelength of InGaN laser-diodes. The absorption cross-section at this wavelength was 1.07 x 10-20 cm2. Under the excitation at 450 nm, the strongest emission was detected at 652 nm, which corresponding to the 3P0 & RARR;3F2 transition of Pr3+. The fluorescence decay time for the 3P0 & RARR;3F2 transition of Pr3+ was fitted to be 4.01 mu s. The results indicate that Pr:NaGd(MoO4)2 crystal is a potential candidate for InGaN-based LD pumped orange-red lasers. |
WOS关键词 | SPECTROSCOPY ; PERFORMANCE ; CW |
资助项目 | Open project of Advanced Laser Technology Laboratory of Anhui Province[AHL2021KF07] ; University Natural Science Research Project of Anhui Province, China[KJ2019ZD06] ; Natural Science Foundation of Anhui Province[2008085QF313] |
WOS研究方向 | Optics |
语种 | 英语 |
出版者 | ELSEVIER |
WOS记录号 | WOS:000856550900010 |
资助机构 | Open project of Advanced Laser Technology Laboratory of Anhui Province ; University Natural Science Research Project of Anhui Province, China ; Natural Science Foundation of Anhui Province |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/128966] |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Zou, Yong; Ding, Shoujun |
作者单位 | 1.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Hefei 230031, Anhui, Peoples R China 2.Anhui Univ Technol, Sch Sci & Engn Math & Phys, Maanshan 243002, Anhui, Peoples R China 3.Adv Laser Technol Lab Anhui Prov, Hefei 230037, Anhui, Peoples R China |
推荐引用方式 GB/T 7714 | Ren, Hao,Li, Hongyuan,Zou, Yong,et al. Growth and properties of Pr3+-doped NaGd(MoO4)2 single crystal: A promising InGaN laser-diode pumped orange-red laser crystal[J]. JOURNAL OF LUMINESCENCE,2022,249. |
APA | Ren, Hao.,Li, Hongyuan.,Zou, Yong.,Deng, Hengyang.,Peng, Ziming.,...&Ding, Shoujun.(2022).Growth and properties of Pr3+-doped NaGd(MoO4)2 single crystal: A promising InGaN laser-diode pumped orange-red laser crystal.JOURNAL OF LUMINESCENCE,249. |
MLA | Ren, Hao,et al."Growth and properties of Pr3+-doped NaGd(MoO4)2 single crystal: A promising InGaN laser-diode pumped orange-red laser crystal".JOURNAL OF LUMINESCENCE 249(2022). |
入库方式: OAI收割
来源:合肥物质科学研究院
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