Type-I PtS2/MoS2 van der Waals heterojunctions with tunable photovoltaic effects and high photosensitivity
文献类型：期刊论文
| 作者 | Zhang, Hui2,3 ; Wang, Zihan2,3; Chen, Jiawang1,4; Tan, Chaoyang2,3; Yin, Shiqi2,3; Zhang, Hanlin2,3; Wang, Shaotian2,3; Qin, Qinggang2,3; Li, Liang1,2,3,4
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| 刊名 | NANOSCALE
 |
| 出版日期 | 2022-10-04 |
| ISSN号 | 2040-3364 |
| DOI | 10.1039/d2nr04231b |
| 通讯作者 | Li, Liang(liliang@issp.ac.cn) |
| 英文摘要 | Recent advances in two-dimensional (2D) materials play an essential role in boosting modern electronics and optoelectronics. Thus far, transition metal dichalcogenides (TMDs) as emerging members of 2D materials, and the van der Waals heterostructures (vdWHs) based on TMDs have been extensively investigated owing to their prominent capabilities and unique crystal structures. In this work, an original vdWH composed of molybdenum disulfide (MoS2) and platinum disulfide (PtS2) was comprehensively studied as a field-effect transistor (FET) and photodetector. A gate-tunable rectifying behavior was obtained, stemming from the band design of PtS2/MoS2 vdWH. Upon 685 nm laser illumination, it also exhibited a superior photodetection performance with a distinctly high photoresponsivity of 403 A W-1, a comparable detectivity of 1.07 x 10(11) Jones, and an excellent external quantum efficiency of 7.32 x 10(4)%. More importantly, fast rise (24 ms) and decay (21 ms) times were obtained under 685 nm light illumination attributed to the unilateral depletion region structure. Further, the photovoltaic effect and photocurrent of the heterojunction could be modulated by a back gate voltage. All these results indicated that such 2D-TMD-based vdWHs provide a new idea for realizing high-performance electronic and optoelectronic devices. |
| WOS关键词 | MONOLAYER ; HETEROSTRUCTURE ; RECTIFICATION ; PHOTOCURRENT |
| 资助项目 | National Natural Science Foundation of China[51902001] ; Pioneer Hundred Talents Program of the Chinese Academy of Sciences[E24BHD17] ; Open Research Fund of Advanced Laser Technology Laboratory of Anhui Province[AHL2020KF02] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | ROYAL SOC CHEMISTRY |
| WOS记录号 | WOS:000867804500001 |
| 资助机构 | National Natural Science Foundation of China ; Pioneer Hundred Talents Program of the Chinese Academy of Sciences ; Open Research Fund of Advanced Laser Technology Laboratory of Anhui Province |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/129339]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Li, Liang |
| 作者单位 | 1.Chinese Acad Sci, Inst Solid State Phys, Hefei Inst Phys Sci, Key Lab Mat Phys,Anhui Key Lab Nanomat & Nanotech, Hefei 230031, Peoples R China 2.Anhui Univ, Inst Phys Sci, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Peoples R China 3.Anhui Univ, Inst Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Peoples R China 4.Univ Sci & Technol China, Hefei 230026, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Hui,Wang, Zihan,Chen, Jiawang,et al. Type-I PtS2/MoS2 van der Waals heterojunctions with tunable photovoltaic effects and high photosensitivity[J]. NANOSCALE,2022. |
| APA | Zhang, Hui.,Wang, Zihan.,Chen, Jiawang.,Tan, Chaoyang.,Yin, Shiqi.,...&Li, Liang.(2022).Type-I PtS2/MoS2 van der Waals heterojunctions with tunable photovoltaic effects and high photosensitivity.NANOSCALE. |
| MLA | Zhang, Hui,et al."Type-I PtS2/MoS2 van der Waals heterojunctions with tunable photovoltaic effects and high photosensitivity".NANOSCALE (2022). |
入库方式： OAI收割
来源：合肥物质科学研究院
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