Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices
文献类型：期刊论文
| 作者 | Lu, Guangbao1,2; Liu, Jun1,2; Zheng, Qirong1,2; Li, Yonggang1,2
|
| 刊名 | FRONTIERS IN MATERIALS
 |
| 出版日期 | 2022-09-28 |
| 卷号 | 9 |
| ISSN号 | 2296-8016 |
| 关键词 | total ionizing dose effect dynamic modeling doubly-hydrogenated oxygen vacancy microscopic mechanism MOS devices |
| DOI | 10.3389/fmats.2022.1010049 |
| 通讯作者 | Li, Yonggang(ygli@theory.issp.ac.cn) |
| 英文摘要 | The total ionizing dose (TID) effect is one of the main causes of the performance degradation/failure of semiconductor devices under high-energy gamma-ray irradiation. In special, the concentration of doubly-hydrogenated oxygen vacancy (a case study of Vo gamma H2) in the oxide layer seriously exacerbates the TID effect. Therefore, we developed a dynamic model of mobile particles and fixed defects by solving the rate equations and Poisson's equation simultaneously, to reveal the contribution and influence mechanisms of Vo gamma H2 on the TID effect of MOS devices. We found that Vo gamma H2 can directly and indirectly promote the formation of V-o gamma(+) and Vo gamma H+ , respectively, which can increase the electric field near the Si/SiO2 interface and reduce the threshold voltage of silicon MOS devices accordingly. Controlling Vo gamma H2 with a concentration below 10(14) cm(-3) can suppress the adverse TID effects. The results are much helpful for analyzing the microscopic mechanisms of the TID effect and designing new MOS devices with high radiation-hardening. |
| WOS关键词 | X-RAY IRRADIATIONS ; CHARGE ; MECHANISMS ; CENTERS ; SIMULATION ; SI-SIO2 ; DEFECTS |
| 资助项目 | National Natural Science Foundation of China[11975018] ; National MCF Energy RD Program[2018YEF0308100] ; Outstanding member of Youth Innovation Promotion Association CAS[Y202087] ; Tianhe-2JK computing time award of the Beijing Computational Science Research Center (CSRC) |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| 出版者 | FRONTIERS MEDIA SA |
| WOS记录号 | WOS:000869089400001 |
| 资助机构 | National Natural Science Foundation of China ; National MCF Energy RD Program ; Outstanding member of Youth Innovation Promotion Association CAS ; Tianhe-2JK computing time award of the Beijing Computational Science Research Center (CSRC) |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/129789]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Li, Yonggang |
| 作者单位 | 1.Chinese Acad Sci, HFIPS, Inst Solid State Phys, Key Lab Mat Phys, Hefei, Peoples R China 2.Univ Sci & Technol China, Hefei, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lu, Guangbao,Liu, Jun,Zheng, Qirong,et al. Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices[J]. FRONTIERS IN MATERIALS,2022,9. |
| APA | Lu, Guangbao,Liu, Jun,Zheng, Qirong,&Li, Yonggang.(2022).Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices.FRONTIERS IN MATERIALS,9. |
| MLA | Lu, Guangbao,et al."Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices".FRONTIERS IN MATERIALS 9(2022). |
入库方式： OAI收割
来源：合肥物质科学研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。