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Effect of stacking type and magnetic moment in spin-valley polarized MoS2-MoSe2 heterobilayers

文献类型：期刊论文

作者Wu, Yanwei3; Liu, Tao3; Hao, Ning1; Long, Mingsheng3; Zhang, Min4; Sun, Qingqing2; Shan, Lei3
刊名AIP ADVANCES
出版日期2022-10-01
卷号12
DOI10.1063/5.0105206
通讯作者Wu, Yanwei(wywss433@126.com) ; Shan, Lei(lshan@ahu.edu.cn)
英文摘要In this work, we focused on engineering the bandgap of the MoS2-MoSe2 heterobilayer via either stacking type or induced magnetic moment with the aid of density functional theory. We have computed the electronic properties of different stacking MoS2-MoSe2 heterobilayers and their magnetization components, in which all situations retain spin-valley locking. Calculations show that different stacking types can cause a bandgap change of a maximum of 0.1 eV. On the other hand, a micro-enhanced magnetic moment in the heterobilayer increases the bandgap (in some cases, there are changes close to 0.3 eV) significantly. Results suggest that the stacking type and induced magnetic moment make MoS2-MoSe2 heterobilayers potential candidates for valleytronics applications. This study provides a new pathway in tuning spin-valley polarization of valleytronics devices.
WOS关键词CHARGE-TRANSFER ; MOS2 ; SE ; FERROMAGNETISM ; MONOLAYERS ; EFFICIENT ; STRAIN ; X=S ; TE
资助项目National Natural Science Foundation of China[61975224] ; University Synergy Innovation Program of Anhui Province[GXXT-2020-050] ; Fund of Anhui Provincial Natural Science Foundation[2008085MF206] ; Recruitment Program for Leading Talent Team of Anhui Province ; State Key Laboratory of Luminescence and Applications[SKLA-2021-03] ; Jiaxing Science and Technology Project[2021AY10057] ; Open Fund of Infrared and Low-Temperature Plasma Key Laboratory of Anhui Province[IRKL2022KF03]
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000875745500002
出版者AIP Publishing
资助机构National Natural Science Foundation of China ; University Synergy Innovation Program of Anhui Province ; Fund of Anhui Provincial Natural Science Foundation ; Recruitment Program for Leading Talent Team of Anhui Province ; State Key Laboratory of Luminescence and Applications ; Jiaxing Science and Technology Project ; Open Fund of Infrared and Low-Temperature Plasma Key Laboratory of Anhui Province
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/130045]  
专题中国科学院合肥物质科学研究院
通讯作者Wu, Yanwei; Shan, Lei
作者单位1.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme C, High Magnet Field Lab, Hefei 230031, Peoples R China
2.Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, 220 Handan Rd, Shanghai 200433, Peoples R China
3.Anhui Univ, Inst Phys Sci & Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Key Lab Struct & Funct Regulat Hybrid Mat,Minist E, 111 Jiu Long Rd, Hefei 230601, Peoples R China
4.Jiaxing Univ, Coll Data Sci, Jiaxing 314001, Peoples R China
推荐引用方式
GB/T 7714		 Wu, Yanwei,Liu, Tao,Hao, Ning,et al. Effect of stacking type and magnetic moment in spin-valley polarized MoS2-MoSe2 heterobilayers[J]. AIP ADVANCES,2022,12.
APA Wu, Yanwei.,Liu, Tao.,Hao, Ning.,Long, Mingsheng.,Zhang, Min.,...&Shan, Lei.(2022).Effect of stacking type and magnetic moment in spin-valley polarized MoS2-MoSe2 heterobilayers.AIP ADVANCES,12.
MLA Wu, Yanwei,et al."Effect of stacking type and magnetic moment in spin-valley polarized MoS2-MoSe2 heterobilayers".AIP ADVANCES 12(2022).

入库方式： OAI收割

来源：合肥物质科学研究院

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