Orientations-Dependent Metal-to-Insulator Transition in Solution- Deposited High-Entropy Nickelate Thin Films
文献类型：期刊论文
| 作者 | Tang, Xianwu1,5 ; Hu, Ling2; Zhu, Xiaoguang2; Zhu, Xuebin2; Wang, Yongjin1,5; Sun, Yuping3,4
|
| 刊名 | CRYSTAL GROWTH & DESIGN
 |
| 出版日期 | 2022-11-03 |
| ISSN号 | 1528-7483 |
| DOI | 10.1021/acs.cgd.2c00945 |
| 通讯作者 | Tang, Xianwu(xwtang@njupt.edu.cn) ; Zhu, Xuebin(xbzhu@issp.ac.cn) |
| 英文摘要 | Rare-earth nickelates-based high-entropy oxide (La0.2Pr0.2Nd0.2Sm0.2- Eu0.2)NiO3 thin films (HEO-Ni) were deposited on (100)-, (110)-, and (111)-oriented LaAlO3 substrates via chemical solution deposition. All HEO-Ni films show epitaxial grain growth, and demonstrate first-order metal-to-insulator transition (MIT) with a sharp resistance change of over two orders of magnitude. Especially, the (110)-epitaxial HEO-Ni thin films, besides a transition temperature of 153 K, show an absolute sharpness of 0.33 K-1 and a resistance change of 2.5 x 104. However, there are different lattice constant/strain and MTI characteristics for the differently oriented HEO-Ni thin films. Their electrical transport anisotropy may be attributed to the varied electron-phonon coupling and localization introduced by the different lattice constants, oxygen vacancies, and grain growth strains caused by the different crystal surfaces and interface energies. All of these results not only indicate the high quality of our derived films, but also suggest that the solution can be an effective alternative method to synthesize HEO thin films. |
| WOS关键词 | CHEMICAL SOLUTION DEPOSITION ; GRAIN-GROWTH ; NONSTOICHIOMETRY ; CONDUCTIVITY |
| 资助项目 | Collaborative Innovation Program of Hefei Science Center, CAS ; National Natural Science Foundation of China ; National Key R&D Program of China ; Higher Education Discipline Innovation Project ; NUPTSF ; [2019HSCCIP008] ; [61827804] ; [2021YFE010807] ; [D17018] ; [NY221008] |
| WOS研究方向 | Chemistry ; Crystallography ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000880840800001 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | Collaborative Innovation Program of Hefei Science Center, CAS ; National Natural Science Foundation of China ; National Key R&D Program of China ; Higher Education Discipline Innovation Project ; NUPTSF |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/130120]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Tang, Xianwu; Zhu, Xuebin |
| 作者单位 | 1.Nanjing Univ Posts & Telecommun, Peter Grunberg Res Ctr, Nanjing 210003, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 3.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China 4.Univ Sci & Technol China, Hefei 230031, Peoples R China 5.GaN Optoelect Integrat Int Cooperat Joint Lab Jian, Nanjing 210003, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tang, Xianwu,Hu, Ling,Zhu, Xiaoguang,et al. Orientations-Dependent Metal-to-Insulator Transition in Solution- Deposited High-Entropy Nickelate Thin Films[J]. CRYSTAL GROWTH & DESIGN,2022. |
| APA | Tang, Xianwu,Hu, Ling,Zhu, Xiaoguang,Zhu, Xuebin,Wang, Yongjin,&Sun, Yuping.(2022).Orientations-Dependent Metal-to-Insulator Transition in Solution- Deposited High-Entropy Nickelate Thin Films.CRYSTAL GROWTH & DESIGN. |
| MLA | Tang, Xianwu,et al."Orientations-Dependent Metal-to-Insulator Transition in Solution- Deposited High-Entropy Nickelate Thin Films".CRYSTAL GROWTH & DESIGN (2022). |
入库方式： OAI收割
来源：合肥物质科学研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。