Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure
文献类型：期刊论文
| 作者 | Cheng, Wangping2,3; Li, Chenhui2,3; Zhou, Chen2,3; He, Yuandi2,3; Wei, Renhuai3 ; Hu, Ling3; Song, Wenhai3; Zhu, Xuebin3; Sun, Yuping1,3,4
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| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2022-11-30 |
| 卷号 | 762 |
| 关键词 | Resistive random access memory Resistive switching Self-rectifying behavior Copper chromium oxide Thin film Solution deposition |
| ISSN号 | 0040-6090 |
| DOI | 10.1016/j.tsf.2022.139542 |
| 通讯作者 | Wei, Renhuai(rhwei@issp.ac.cn) ; Zhu, Xuebin(xbzhu@issp.ac.cn) |
| 英文摘要 | The resistive random access memory with self-rectifying behavior is one of the most effective to suppress the crosstalk current problem in crossbar array architectures. In this study, a p-type delafossite CuCrO2 thin film is fabricated on an n-type silicon (n-Si) substrate, and the resistive switching (RS) behavior of the Au/CuCrO2/n-Si device is investigated in detail. The heterostructure exhibits repeatable bipolar RS with self-rectifying behavior. The bipolar RS behavior can be attributed to the trapping/detrapping of charge carriers in oxygen vacancies at the p-CuCrO2/n-Si interface. The current-voltage characteristics indicate that the self-rectifying behavior in the low resistance state is derived from the Schottky-like barrier at the interface of p-CuCrO2/n-Si. These results provide a potential utilization of resistive random access memory with self-rectifying behavior in p-type delafossite-based heterostructures. |
| WOS关键词 | THIN-FILMS ; INTEGRATION ; MEMRISTOR ; MEMORIES |
| 资助项目 | National Natural Science Foundation of China ; Anhui Provincial Key R D Program ; [12274410] ; [2022a05020037] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000885782500003 |
| 出版者 | ELSEVIER SCIENCE SA |
| 资助机构 | National Natural Science Foundation of China ; Anhui Provincial Key R D Program |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/130319]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Wei, Renhuai; Zhu, Xuebin |
| 作者单位 | 1.Chinese Acad Sci, High Magnet Field Lab, HFIPS, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China 4.Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cheng, Wangping,Li, Chenhui,Zhou, Chen,et al. Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure[J]. THIN SOLID FILMS,2022,762. |
| APA | Cheng, Wangping.,Li, Chenhui.,Zhou, Chen.,He, Yuandi.,Wei, Renhuai.,...&Sun, Yuping.(2022).Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure.THIN SOLID FILMS,762. |
| MLA | Cheng, Wangping,et al."Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure".THIN SOLID FILMS 762(2022). |
入库方式： OAI收割
来源：合肥物质科学研究院
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