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Realization of adjustable electron concentration and its effect on electrical- and Seebeck-property of n-type SnSe crystals

文献类型：期刊论文

作者Zhou, Xiao-Li2,3; Lv, Yang-Yang4,5; Zhang, Hang-Fei2,3; Zhang, Yong1; Zhang, Jinglei1; Zhou, Jian2,3,4; Yao, Shu-Hua2,3,4; Chen, Y. B.4,5; Chen, Yan-Feng2,3,4,6
刊名APPLIED PHYSICS LETTERS
出版日期2022-01-10
卷号120
ISSN号0003-6951
DOI10.1063/5.0078990
通讯作者Yao, Shu-Hua(shyao@nju.edu.cn) ; Chen, Y. B.(ybchen@nju.edu.cn)
英文摘要Manipulation of carrier types in SnSe crystals is quite advantageous to fabricate SnSe-based homojunction devices such as thermoelectric modules. However, tuning the n-type charge carrier at an optimal level of SnSe is quite challenging because of its natural p-type without intentional doping. Here, we report the realization of the n-type SnSe through halogens or Ce doping. Importantly, heavily electron doped SnSe single crystals (similar to 10(19) cm(-3)) can be obtained by Ce-doping through the Bridgeman method. The electrical conductivity of as-grown SnSe crystals evolves from thermally activated behavior to the metallic one when the electron concentrations are increased from 10(16) to 10(19) cm(-3). Remarkably, the power-factor and electronic quality factor of heavily electron Ce-doped SnSe crystals can reach 1.59 and 0.44 mu W cm(-1)K(-2) at 300 K, respectively, which is one of the best thermoelectric n-type SnSe. This work suggests that Ce-doping through the Bridgeman method is an ideal route for further improving the thermoelectric property of n-type SnSe crystals. Published under an exclusive license by AIP Publishing.
WOS研究方向Physics
语种英语
出版者AIP Publishing
WOS记录号WOS:000791375600008
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/130817]  
专题中国科学院合肥物质科学研究院
通讯作者Yao, Shu-Hua; Chen, Y. B.
作者单位1.Chinese Acad Sci, High Field Magnet Lab, Anhui Prov Key Lab Condensed Matter Phys Extreme, Hefei 230031, Anhui, Peoples R China
2.Nanjing Univ, Jiangsu Key Lab Artificial Funct Mat, Nanjing 210093, Jiangsu, Peoples R China
3.Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
4.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
5.Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China
6.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
推荐引用方式
GB/T 7714		 Zhou, Xiao-Li,Lv, Yang-Yang,Zhang, Hang-Fei,et al. Realization of adjustable electron concentration and its effect on electrical- and Seebeck-property of n-type SnSe crystals[J]. APPLIED PHYSICS LETTERS,2022,120.
APA Zhou, Xiao-Li.,Lv, Yang-Yang.,Zhang, Hang-Fei.,Zhang, Yong.,Zhang, Jinglei.,...&Chen, Yan-Feng.(2022).Realization of adjustable electron concentration and its effect on electrical- and Seebeck-property of n-type SnSe crystals.APPLIED PHYSICS LETTERS,120.
MLA Zhou, Xiao-Li,et al."Realization of adjustable electron concentration and its effect on electrical- and Seebeck-property of n-type SnSe crystals".APPLIED PHYSICS LETTERS 120(2022).

入库方式： OAI收割

来源：合肥物质科学研究院

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