Strongly Tunable Raman Resonance in InSe under Pressure br
文献类型：期刊论文
| 作者 | Huang, Ge1,2,5; Zhou, Yan2; Dong, Zuo-Yuan2; Li, Wei-Jian2; Bu, Ke-Jun2; Zhou, Shi1,3; Wang, Tao3,4 ; Lu, Xu-Jie2; Chen, Xiao-Jia2
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| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
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| 出版日期 | 2022-04-14 |
| 卷号 | 126 |
| ISSN号 | 1932-7447 |
| DOI | 10.1021/acs.jpcc.2c00913 |
| 通讯作者 | Chen, Xiao-Jia(xjchen@hpstar.ac.cn) |
| 英文摘要 | The graphene-like layered semiconductor indium selenide has recentlyattracted widespread attention owing to its large tunability of the electronic states by varyinglayer thickness, chemical doping, or strain. However, the influence of the modulated inter- andintralayer chemical bonding upon lattice change on the optical and electrical properties is stillin its infant stage. Here, we systematically investigate the high-pressure behaviors of thephonon modes and excitonic states in epsilon-InSe based on the measurements of Raman,absorption, and photoluminescence spectroscopy combined with theoretical calculations. Wefind drastically enhanced intensities similar to 3 orders of magnitude for the polar and high-orderRaman modes. Such intensity enhancements of the Raman modes are found to arise from thenear resonance between the laser photon energy and the exciton B in InSe with increasingpressure. Further analysis indicates unexpected weakening of the intralayer In-In bonds and adecrease of polarity of the In-Se bonds upon compression, thus leading to an increase in theenergy of exciton B. These results also explain the nonlinear pressure-dependent band gaptransition. We demonstrate that InSe provides a versatile platform from which to explore the practical applications inflexibleelectronic and optoelectronic devices. |
| WOS关键词 | INDIUM SELENIDE ; ELECTRONIC-STRUCTURE ; VIBRATIONAL PROPERTIES ; BLACK PHOSPHORUS ; LAYERED INSE ; SCATTERING ; GASE |
| 资助项目 | National Key R&D Program of China[2018YFA0305900] ; Shenzhen Virtual University Park[2021Szvup110] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000791598700027 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | National Key R&D Program of China ; Shenzhen Virtual University Park |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/130855]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Chen, Xiao-Jia |
| 作者单位 | 1.Univ Sci & Technol China, Hefei 230026, Peoples R China 2.Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China 3.Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China 4.Northwestern Polytech Univ, Res & Dev Inst, Shenzhen 518057, Peoples R China 5.Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, HFIPS, Hefei 230031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, Ge,Zhou, Yan,Dong, Zuo-Yuan,et al. Strongly Tunable Raman Resonance in InSe under Pressure br[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2022,126. |
| APA | Huang, Ge.,Zhou, Yan.,Dong, Zuo-Yuan.,Li, Wei-Jian.,Bu, Ke-Jun.,...&Chen, Xiao-Jia.(2022).Strongly Tunable Raman Resonance in InSe under Pressure br.JOURNAL OF PHYSICAL CHEMISTRY C,126. |
| MLA | Huang, Ge,et al."Strongly Tunable Raman Resonance in InSe under Pressure br".JOURNAL OF PHYSICAL CHEMISTRY C 126(2022). |
入库方式： OAI收割
来源：合肥物质科学研究院
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