Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires
文献类型：期刊论文
| 作者 | Hu, H. J.1,3; Zhen, W. L.1; Weng, S. R.1; Li, Y. D.1; Niu, R.1; Yue, Z. L.1; Xu, F.1; Pi, L.1,3 ; Zhang, C. J.1,2; Zhu, W. K.1
|
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2022-05-16 |
| 卷号 | 120 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/5.0080334 |
| 通讯作者 | Pi, L.(pili@ustc.edu.cn) ; Zhang, C. J.(zhangcj@hmfl.ac.cn) ; Zhu, W. K.(wkzhu@hmfl.ac.cn) |
| 英文摘要 | Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional research. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising applications such as photodetectors. However, it remains an open question whether performance crossover will occur when the channel material is downsized. Here, we report on the fabrication and testing of photodetectors based on exfoliated quasi-1D BiSeI thin wires. Compared with the device on bulk crystal, a significantly enhanced photoresponse is observed, which is manifested by a series of performance parameters, including ultrahigh responsivity (7 x 10(4) A W-1), specific detectivity (2.5 x 10(14) Jones), and external quantum efficiency (1.8 x 10(7)%) when V-ds = 3 V, lambda = 515 nm, and P = 0.01 mW cm(-2). The conventional photoconductive effect is unlikely to account for such a superior photoresponse, which is ultimately understood in terms of the increased specific surface area and the photogating effect caused by trapping states. This work provides a perspective for the modulation of optoelectronic properties and performance in quasi-1D materials. |
| WOS关键词 | PHOTOCURRENT GENERATION ; PHOTODETECTORS ; NANOMATERIALS ; MECHANISMS ; TRANSITION |
| 资助项目 | National Key R&D Program of China[2021YFA1600201] ; National Natural Science Foundation of China[11874363] ; National Natural Science Foundation of China[11974356] ; National Natural Science Foundation of China[U1932216] ; Anhui Province Laboratory of High Magnetic Field[AHHM-FX-2020-01] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| 出版者 | AIP Publishing |
| WOS记录号 | WOS:000797242400016 |
| 资助机构 | National Key R&D Program of China ; National Natural Science Foundation of China ; Anhui Province Laboratory of High Magnetic Field |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/131051]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Pi, L.; Zhang, C. J.; Zhu, W. K. |
| 作者单位 | 1.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China 2.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China 3.Univ Sci & Technol China, Hefei 230026, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu, H. J.,Zhen, W. L.,Weng, S. R.,et al. Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires[J]. APPLIED PHYSICS LETTERS,2022,120. |
| APA | Hu, H. J..,Zhen, W. L..,Weng, S. R..,Li, Y. D..,Niu, R..,...&Zhu, W. K..(2022).Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires.APPLIED PHYSICS LETTERS,120. |
| MLA | Hu, H. J.,et al."Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires".APPLIED PHYSICS LETTERS 120(2022). |
入库方式： OAI收割
来源：合肥物质科学研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。