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CaZrO3-Mediated Structural Instability and Electrical Properties in Doped Ferroelectric (K,Na)NbO3-LiTaO3 Films

文献类型：期刊论文

作者Xu, Liqiang1,4; Chen, Haoyu1,4; Dai, Song1,4; Han, Kun1,4; Chen, Pingfan1,4; Wang, Ke6; Wu, Yanqi6; Huang, Zhen1,4,5; Wu, Wenbin1,2,3,4; Chen, Feng3
刊名ACS APPLIED ELECTRONIC MATERIALS
出版日期2022-03-22
卷号4
关键词chemical doping structural instability electrical property energy barrier phase transition behavior
DOI10.1021/acsaelm.1c01331
通讯作者Huang, Zhen(huangz@ahu.edu.cn) ; Chen, Feng(fchen@hmfl.ac.cn)
英文摘要Chemical doping has been widely applied to modify the lattice structure and functionalities in perovskite oxide layers. Here, the CaZrO3-doped (K0.49Na0.49Li0.02)(Ta0.2Nb0.8)O-3 films [i.e., KNNLT(1 - x)-CZx, with nominal doping levels x of CaZrO3 selected at 0, 3, and 5%] are chosen to investigate how the structural instability, as well as dielectric and ferroelectric properties, changes with x. Compared to the undoped film, the introduction of CaZrO3 suppresses the coexistence of tetragonal and orthorhombic phases, leaving the orthorhombic phase more favored at room temperature. With x increasing from 0 to 5%, the room-temperature dielectric constant is improved by 60% (i.e., from 736 to 1183 at 1 kHz). On the other hand, the temperature-dependent dielectric constant reveals that the transition temperature TMIX-T, where the almost equivalently mixed phase turns into the high-temperature tetragonal-dominant phase on heating, is reduced with an increase in x. This suggests the doped CaZrO3 can effectively reduce the energy barrier between the coexisting orthorhombic and tetragonal phases. More importantly, the ferroelectric nature is maintained up to 200 degrees C in all those samples, showing great application potentials in lead-free electronic devices with tunable structural stability.
WOS关键词TEMPERATURE
资助项目National Key Research and Development Program of China[2017YFA0403502] ; National Key Research and Development Program of China[2016YFA0401003] ; National Key Research and Development Program of China[2017YFA0402903] ; National Natural Science Foundation of Chin[12074001] ; National Natural Science Foundation of Chin[12104008] ; National Natural Science Foundation of Chin[12104002] ; National Natural Science Foundation of Chin[11974326] ; National Natural Science Foundation of Chin[52032005] ; National Natural Science Foundation of Chin[U2032218] ; Hefei Science Center CAS[2018ZYFX002] ; Collaborative Innovation Cultivation Foundation of Hefei Science Center ; Chinese Academy of Sciences[2021HSC-CIP017] ; State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University[KFZD202001] ; Anhui Provincial Higher-Education Natural Science Research Project[K120462019]
WOS研究方向Engineering ; Materials Science
语种英语
WOS记录号WOS:000795896500040
出版者AMER CHEMICAL SOC
资助机构National Key Research and Development Program of China ; National Natural Science Foundation of Chin ; Hefei Science Center CAS ; Collaborative Innovation Cultivation Foundation of Hefei Science Center ; Chinese Academy of Sciences ; State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University ; Anhui Provincial Higher-Education Natural Science Research Project
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/131135]  
专题中国科学院合肥物质科学研究院
通讯作者Huang, Zhen; Chen, Feng
作者单位1.Anhui Univ, Inst Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Peoples R China
2.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
3.Chinese Acad Sci, High Magnet Field Lab, Anhui Prov Key Lab Condensed Matter Phys Extreme, Hefei 230031, Peoples R China
4.Anhui Univ, Inst Phys Sci, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Peoples R China
5.Anhui Univ, Stony Brook Inst, Hefei 230039, Peoples R China
6.Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
推荐引用方式
GB/T 7714		 Xu, Liqiang,Chen, Haoyu,Dai, Song,et al. CaZrO3-Mediated Structural Instability and Electrical Properties in Doped Ferroelectric (K,Na)NbO3-LiTaO3 Films[J]. ACS APPLIED ELECTRONIC MATERIALS,2022,4.
APA Xu, Liqiang.,Chen, Haoyu.,Dai, Song.,Han, Kun.,Chen, Pingfan.,...&Chen, Feng.(2022).CaZrO3-Mediated Structural Instability and Electrical Properties in Doped Ferroelectric (K,Na)NbO3-LiTaO3 Films.ACS APPLIED ELECTRONIC MATERIALS,4.
MLA Xu, Liqiang,et al."CaZrO3-Mediated Structural Instability and Electrical Properties in Doped Ferroelectric (K,Na)NbO3-LiTaO3 Films".ACS APPLIED ELECTRONIC MATERIALS 4(2022).

入库方式： OAI收割

来源：合肥物质科学研究院

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