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Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks

文献类型：期刊论文

作者Zhen, Weili2,3; Zhou, Xi4,5; Weng, Shirui2; Zhu, Wenka2; Zhang, Changjin1,2,6
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2022-03-16
卷号14
关键词2D materials ternary semiconductors photodetectors phototransistors ultrasensitive and ultrafast response optical neural networks
ISSN号1944-8244
DOI10.1021/acsami.2c00063
通讯作者Zhu, Wenka(wkzhu@hmfl.ac.cn) ; Zhang, Changjin(zhangcj@hmfl.ac.cn)
英文摘要The demand for high-performance semiconductors in electronics and optoelectronics has prompted the expansion of low-dimensional materials research to ternary compounds. However, photodetectors based on 2D ternary materials usually suffer from large dark currents and slow response, which means increased power consumption and reduced performance. Here we report a systematic study of the optoelectronic properties of well-characterized rhombohedral ZnIn2S4 (R-ZIS) nanosheets which exhibit an extremely low dark current (7 pA at 5 V bias). The superior performance represented by a series of parameters surpasses most 2D counterparts. The ultrahigh specific detectivity (1.8 x 10(14) Jones), comparably short response time (tau(rise) = 222 mu s, tau(decay) = 158 mu s), and compatibility with high-frequency operation (1000 Hz) are particularly prominent. Moreover, a gate-tunable characteristic is observed, which is attributed to photogating and improves the photoresponse by 2 orders of magnitude. Gating technique can effectively modulate the photocurrent-generation mechanism from photoconductive effect to dominant photogating. The combination of ultrahigh sensitivity, ultrafast response, and high gate tunability makes the R-ZIS phototransistor an ideal device for low-energy-consumption and high-frequency optoelectronic applications, which is further demonstrated by its excellent performance in optical neural networks and promising potential in optical deep learning and computing.
WOS关键词PHOTOCURRENT GENERATION ; MONOLAYER ; PERFORMANCE ; VAN ; GRAPHENE
资助项目National Key R&D Program of China[2021YFA1600201] ; National Natural Science Foundation of China[11874363] ; National Natural Science Foundation of China[11974356] ; National Natural Science Foundation of China[U1932216] ; Anhui Province Laboratory of High Magnetic Field[AHHM-FX-2020-01]
WOS研究方向Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000787549000055
出版者AMER CHEMICAL SOC
资助机构National Key R&D Program of China ; National Natural Science Foundation of China ; Anhui Province Laboratory of High Magnetic Field
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/131549]  
专题中国科学院合肥物质科学研究院
通讯作者Zhu, Wenka; Zhang, Changjin
作者单位1.Anhui Univ, Inst Phys Sci, Hefei 230601, Peoples R China
2.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
3.Univ Sci & Technol China, Hefei 230026, Peoples R China
4.Chinese Acad Sci, Interdisciplinary Res Ctr, Shanghai Adv Res Inst, Shanghai 201210, Peoples R China
5.Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China
6.Anhui Univ, Inst Informat Technol, Hefei 230601, Peoples R China
推荐引用方式
GB/T 7714		 Zhen, Weili,Zhou, Xi,Weng, Shirui,et al. Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks[J]. ACS APPLIED MATERIALS & INTERFACES,2022,14.
APA Zhen, Weili,Zhou, Xi,Weng, Shirui,Zhu, Wenka,&Zhang, Changjin.(2022).Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks.ACS APPLIED MATERIALS & INTERFACES,14.
MLA Zhen, Weili,et al."Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks".ACS APPLIED MATERIALS & INTERFACES 14(2022).

入库方式： OAI收割

来源：合肥物质科学研究院

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