中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-Performance Planar-Type Photodetector Based on Hot-PressedCsPbBr(3) Wafer br

文献类型:期刊论文

作者Zhao, Xiao2,3,6; Wang, Shimao2,3,4; Zhuge, Fuwei7; Song, Yanan1,2,3; Aoki, Toru8; Dong, Weiwei9; Fu, Mengyu1,2,3; Meng, Gang2,3,4; Deng, Zanhong2,3; Tao, Ruhua2,3,4
刊名JOURNAL OF PHYSICAL CHEMISTRY LETTERS
出版日期2022-04-07
卷号13
ISSN号1948-7185
DOI10.1021/acs.jpclett.2c00089
通讯作者Wang, Shimao(shmwang@aiofm.ac.cn) ; Meng, Gang(menggang@aiofm.ac.cn) ; Fang, Xiaodong(fangxiaodong@sztu.edu.cn)
英文摘要Considering the disadvantages of the common methods for CsPbBr3singlecrystal growth including the high cost of the melt method and the low shape controllabilityof the solution method, a facile hot-pressed (HP) approach has been introduced to prepareCsPbBr3wafers. The effects of HP temperature on the phase purity of HP-CsPbBr3wafersand the performance of the corresponding photodetectors have been investigated. The HPtemperature for preparing phase-pure, shape-regular, and dense CsPbBr3wafers has beenoptimized to be 150 degrees C, and the HP-CsPbBr3wafer based planar-type photodetectorsexhibit an ultrasensitive weak light photoresponse. Under the illumination of a 530 nm LEDwith a light power density of 1.1 mu Wcm-2, the responsivity, external quantum efficiency, anddetectivity of the devices reach 19.79 A W-1, 4634%, and 2.14x1013Jones, respectively, and a fast response speed with a rise time of40.5 mu s and a fall time of 10.0 mu s has been achieved.
WOS关键词PEROVSKITE CSPBBR3 CRYSTALS ; METHYLAMMONIUM LEAD IODIDE ; ENERGY ; OPPORTUNITIES ; CHALLENGES ; DIFFUSION ; MIGRATION ; GROWTH ; LIGHT
资助项目National Natural Science Foundation of China[62075223] ; National Natural Science Foundation of China[11674324] ; National Natural Science Foundation of China[62175167] ; Advanced Laser Technology Laboratory of Anhui Province[AHL2020ZR02] ; CAS Pioneer Hundred Talents Program of Chinese Academy of Sciences, Natural Science Foundation of Top Talent of Shenzhen Technology University[2020101] ; Anhui Key Laboratory of Advanced Building Materials[JZCL003 KF] ; Natural Science Research Project of Higher School of Anhui Province[KJ2020A0477]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000787083700020
资助机构National Natural Science Foundation of China ; Advanced Laser Technology Laboratory of Anhui Province ; CAS Pioneer Hundred Talents Program of Chinese Academy of Sciences, Natural Science Foundation of Top Talent of Shenzhen Technology University ; Anhui Key Laboratory of Advanced Building Materials ; Natural Science Research Project of Higher School of Anhui Province
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/131573]  
专题中国科学院合肥物质科学研究院
通讯作者Wang, Shimao; Meng, Gang; Fang, Xiaodong
作者单位1.Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China
2.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Peoples R China
3.Chinese Acad Sci, Hefei Inst Phys Sci, Key Lab Photovolta & Energy Conservat Mat, Hefei 230031, Peoples R China
4.Adv Laser Technol Lab Anhui Prov, Hefei 230037, Peoples R China
5.Shenzhen Technol Univ, Coll New Mat & New Energies, Shenzhen 518118, Peoples R China
6.Univ Sci & Technol China, Sch Environm Sci & Optoelect Technol, Hefei 230026, Peoples R China
7.Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, Wuhan 430074, Peoples R China
8.Shizuoka Univ, Res Inst Elect, Hamamatsu, Shizuoka 4328011, Japan
9.Anhui Jianzhu Univ, Sch Mat & Chem Engn, Hefei 230009, Peoples R China
推荐引用方式
GB/T 7714
Zhao, Xiao,Wang, Shimao,Zhuge, Fuwei,et al. High-Performance Planar-Type Photodetector Based on Hot-PressedCsPbBr(3) Wafer br[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2022,13.
APA Zhao, Xiao.,Wang, Shimao.,Zhuge, Fuwei.,Song, Yanan.,Aoki, Toru.,...&Fang, Xiaodong.(2022).High-Performance Planar-Type Photodetector Based on Hot-PressedCsPbBr(3) Wafer br.JOURNAL OF PHYSICAL CHEMISTRY LETTERS,13.
MLA Zhao, Xiao,et al."High-Performance Planar-Type Photodetector Based on Hot-PressedCsPbBr(3) Wafer br".JOURNAL OF PHYSICAL CHEMISTRY LETTERS 13(2022).

入库方式: OAI收割

来源:合肥物质科学研究院

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