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Thickness dependence of metal-insulator transition in SrMoO3 thin films

文献类型：期刊论文

作者Zhu, Min3,4; Li, Pengfei4; Hu, Ling4; Wei, Renhuai4; Yang, Jie4; Song, Wenhai4; Zhu, Xuebin3,4; Sun, Yuping1,2,4
刊名JOURNAL OF APPLIED PHYSICS
出版日期2022-08-21
卷号132
ISSN号0021-8979
DOI10.1063/5.0098993
通讯作者Hu, Ling(huling@issp.ac.cn) ; Zhu, Xuebin(xbzhu@issp.ac.cn)
英文摘要We have investigated the thickness-dependent transport properties of SrMoO3 thin films deposited on LaAlO3 substrates. Metal-insulator transitions (MITs) were observed in SrMoO3 thin films with thickness below 10 nm. The low-temperature resistivity of these films can be explained by quantum corrections of the conductivity. An insulating behavior is observed when the thickness becomes 3.5 nm, and the resistivity can be described by the variable range hopping model with 2D fitting. The magneto-transport measurement of an SrMoO3 thin film with small positive magnetoresistance confirms that the driving force behind MIT is the renormalized electron-electron interaction. Published under an exclusive license by AIP Publishing.
WOS关键词HOPPING CONDUCTIVITY ; BANDWIDTH CONTROL ; RESISTIVITY ; CA1-XSRXVO3 ; DIFFUSION ; GROWTH
资助项目Anhui Provincial Key RD Program[2022a05020037] ; Collaborative Innovation Program of Hefei Science Center, CAS[2019HSCCIP008] ; National Natural Science Foundation of China ; Chinese Academy of Sciences Large-Scale Scientific Facility[U1532149]
WOS研究方向Physics
语种英语
WOS记录号WOS:000843032400001
出版者AIP Publishing
资助机构Anhui Provincial Key RD Program ; Collaborative Innovation Program of Hefei Science Center, CAS ; National Natural Science Foundation of China ; Chinese Academy of Sciences Large-Scale Scientific Facility
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/132033]  
专题中国科学院合肥物质科学研究院
通讯作者Hu, Ling; Zhu, Xuebin
作者单位1.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
2.Chinese Acad Sci, High Magnet Field Lab, HFIPS, Hefei 230031, Peoples R China
3.Univ Sci & Technol China, Sci Isl Grad Sch, Hefei 230026, Peoples R China
4.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Zhu, Min,Li, Pengfei,Hu, Ling,et al. Thickness dependence of metal-insulator transition in SrMoO3 thin films[J]. JOURNAL OF APPLIED PHYSICS,2022,132.
APA Zhu, Min.,Li, Pengfei.,Hu, Ling.,Wei, Renhuai.,Yang, Jie.,...&Sun, Yuping.(2022).Thickness dependence of metal-insulator transition in SrMoO3 thin films.JOURNAL OF APPLIED PHYSICS,132.
MLA Zhu, Min,et al."Thickness dependence of metal-insulator transition in SrMoO3 thin films".JOURNAL OF APPLIED PHYSICS 132(2022).

入库方式： OAI收割

来源：合肥物质科学研究院

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