Enhancing the performances of V2O3 thin films as p-type transparent conducting oxides via compressive strain
文献类型：期刊论文
| 作者 | Zhu, M.4,5 ; Zhang, G. D.5; Song, D. P.3; Wu, J. Y.3; Zhang, R. R.2; Hu, L.5; Wei, R. H.5; Song, W. H.5; Zhu, X. B.5; Sun, Y. P.1,2,5
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| 刊名 | APPLIED PHYSICS LETTERS
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| 出版日期 | 2022-08-08 |
| 卷号 | 121 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/5.0099445 |
| 通讯作者 | Hu, L.(huling@issp.ac.cn) ; Zhu, X. B.(xbzhu@issp.ac.cn) |
| 英文摘要 | The traditional strategy for transparent conducting oxides (TCOs) follows the path of chemical design by increasing carrier concentrations in insulators through deliberate doping to coordinate the exclusive properties of electrical conductivity with optical transparency. Despite the success of n-type TCOs, the developed p-type TCOs based on chemical design exhibit much lower performance than the n-type counterparts primarily constrained by the hole doping trouble. Recently, the correlated metal of a V2O3 thin film has been reported as high-performance p-type TCOs with high hole concentration (> 10(22) cm(-3)). In this paper, we propose an alternative approach of compressive strain in V2O3 thin films toward further increasing the carrier concentration and, consequently, enhancing the performance of p-type TCOs. The compressive strain of the V2O3 thin film is realized by the lattice mismatch between V2O3 and Al2O3. Interestingly, carrier concentrations in strained V2O3 thin films can be increased by several times exceeding 10(23) cm(-3), which directly correlates with the increase (decrease) in a 1 g ( e g pi) orbital occupation as verified by the Raman spectrum. Meanwhile, the screened plasma energy of a strained V2O3 thin film shifts to & SIM;1.6 eV, which is less than 1.75 eV to assure the opening of the transparency window in the visible region. As a result, strained V2O3 thin films exhibit enhanced performance as p-type TCOs with relatively high figure of merit. These results indicate that the structural modification can open up an effective approach for increasing the carrier concentration and enhancing the performance of p-type TCOs. Published under an exclusive license by AIP Publishing. |
| WOS关键词 | ELECTRICAL-PROPERTIES ; TRANSITION ; DENSITY ; PHYSICS ; DESIGN ; MODEL |
| 资助项目 | Anhui Provincial Key RD Program[2022a05020037] ; Collaborative Innovation Program of Hefei Science Center, CAS[2019HSCCIP008] ; National Natural Science Foundation of China ; Chinese Academy of Sciences Large-Scale Scientific Facility[U1532149] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000838442100006 |
| 出版者 | AIP Publishing |
| 资助机构 | Anhui Provincial Key RD Program ; Collaborative Innovation Program of Hefei Science Center, CAS ; National Natural Science Foundation of China ; Chinese Academy of Sciences Large-Scale Scientific Facility |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/132035]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Hu, L.; Zhu, X. B. |
| 作者单位 | 1.Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, High Magnet Field Lab, HFIPS, Hefei 230031, Peoples R China 3.Jiangsu Univ Sci & Technol, Dept Phys, Zhenjiang 212003, Peoples R China 4.Univ Sci & Technol China, Hefei 230026, Peoples R China 5.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, M.,Zhang, G. D.,Song, D. P.,et al. Enhancing the performances of V2O3 thin films as p-type transparent conducting oxides via compressive strain[J]. APPLIED PHYSICS LETTERS,2022,121. |
| APA | Zhu, M..,Zhang, G. D..,Song, D. P..,Wu, J. Y..,Zhang, R. R..,...&Sun, Y. P..(2022).Enhancing the performances of V2O3 thin films as p-type transparent conducting oxides via compressive strain.APPLIED PHYSICS LETTERS,121. |
| MLA | Zhu, M.,et al."Enhancing the performances of V2O3 thin films as p-type transparent conducting oxides via compressive strain".APPLIED PHYSICS LETTERS 121(2022). |
入库方式： OAI收割
来源：合肥物质科学研究院
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