Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP
文献类型：期刊论文
| 作者 | Ding, Chuyun2,3; Yao, Yuyu1,3; Zhu, Leilei4; Shang, Honghui5; Xu, Peng3; Liu, Xiaolin2; Lin, Jia2; Wang, Feng3; Zhan, Xueying3; He, Jun6 |
| 刊名 | SMALL
 |
| 出版日期 | 2022-03-11 |
| 页码 | 9 |
| ISSN号 | 1613-6810 |
| 关键词 | 2D layered materials chemical vapor deposition field-effect transistors (FETs) Raman scattering SnP nanosheets |
| DOI | 10.1002/smll.202108017 |
| 英文摘要 | As an important metal phosphides material, 2D tin phosphides (SnPx 0 < x <= 3) have been theoretically predicted to have intriguing physicochemical properties and potential applications in electronics, optoelectronics, and energy fields. However, the synthesis of high-quality 2D SnP single crystal has not been reported due to the lack of efficiency and reliable growth method. Here, a facile atmospheric pressure chemical vapor deposition (APCVD) method is developed to realize the growth of high-quality 2D SnP nanosheets, by employing tin (Sn) foil as both liquid metal substrates and reaction precursor. Temperature-dependent and angle-resolved polarization Raman spectra observed Raman peaks located at 142.6, 303.3, and 444.2 cm(-1) are concluded to belong to A(1g) mode, which are consistent with the theoretical calculation results. Moreover, the field-effect transistor (FET) devices based on SnP nanosheets show a typical n-type characteristic with an on/off ratio of 10(3) at 200 K. SnP nanosheets also demonstrate excellent photoresponse performance under the illumination of 473, 532, and 639 nm lasers, which can be tuned by V-gs, V-ds, and light power density. It is believed that these findings can provide the first-hand experimental information for the future study of 2D SnP nanosheets. |
| 资助项目 | National Key R&D Program of China[2018YFA0703700] ; National Natural Science Foundation of China[91964203] ; National Natural Science Foundation of China[61974036] ; National Natural Science Foundation of China[61804035] ; National Natural Science Foundation of China[61804146] ; National Natural Science Foundation of China[12174246] ; National Natural Science Foundation of China[61875119] ; CAS Key Laboratory of Nanosystem and Hierarchical Fabrication ; Youth Innovation Promotion Association CAS |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| WOS记录号 | WOS:000767626200001 |
| 源URL | [http://119.78.100.204/handle/2XEOYT63/18952]  |
| 专题 | 中国科学院计算技术研究所期刊论文_英文 |
| 通讯作者 | Lin, Jia; Zhan, Xueying; Wang, Zhenxing |
| 作者单位 | 1.Univ Chinese Acad Sci, Sino Danish Coll, Beijing 100049, Peoples R China 2.Shanghai Univ Elect Power, Dept Phys, Shanghai Key Lab Mat Protect & Adv Mat Elect Powe, Shanghai 200090, Peoples R China 3.Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China 4.Univ Sci & Technol China, Dept Chem Phys, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China 5.Chinese Acad Sci, Inst Comp Technol, State Key Lab Comp Architecture, Beijing 100190, Peoples R China 6.Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ding, Chuyun,Yao, Yuyu,Zhu, Leilei,et al. Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP[J]. SMALL,2022:9. |
| APA | Ding, Chuyun.,Yao, Yuyu.,Zhu, Leilei.,Shang, Honghui.,Xu, Peng.,...&Wang, Zhenxing.(2022).Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP.SMALL,9. |
| MLA | Ding, Chuyun,et al."Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP".SMALL (2022):9. |
入库方式： OAI收割
来源：计算技术研究所
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