Exciton Proliferation and Fate of the Topological Mott Insulator in a Twisted Bilayer Graphene Lattice Model
文献类型：期刊论文
| 作者 | Lin, Xiyue2; Chen, Bin-Bin; Li, Wei4 ; Meng, Zi Yang1,3; Shi, Tao
|
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2022 |
| 卷号 | 128期号:15页码:157201 |
| ISSN号 | 0031-9007 |
| 关键词 | MAGIC-ANGLE REALIZATION TRANSITIONS ELECTRON CASCADE STATES BANDS |
| DOI | 10.1103/PhysRevLett.128.157201 |
| 英文摘要 | A topological Mott insulator (TMI) with spontaneous time-reversal symmetry breaking and nonzero Chern number has been discovered in a real-space effective model for twisted bilayer graphene (TBG) at 3/4 filling in the strong coupling limit [1]. However, the finite temperature properties of such a TMI state remain illusive. In this work, employing the state-of-the-art thermal tensor network and the perturbative field-theoretical approaches, we obtain the finite-T phase diagram and the dynamical properties of the TBG model. The phase diagram includes the quantum anomalous Hall and charge density wave phases at low T, and an Ising transition separating them from the high-T symmetric phases. Because of the proliferation of excitons-particle-hole bound states-the transitions take place at a significantly reduced temperature than the mean-field estimation. The exciton phase is accompanied with distinctive experimental signatures in such as in charge compressibilities and optical conductivities close to the transition. Our work explains the smearing of the many-electron state topology by proliferating excitons and opens an avenue for controlled many-body investigations on finite-temperature states in the TBG and other quantum moire ' systems. |
| 学科主题 | Physics |
| 语种 | 英语 |
| 源URL | [http://ir.itp.ac.cn/handle/311006/27744]  |
| 专题 | 理论物理研究所_理论物理所1978-2010年知识产出 |
| 作者单位 | 1.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Theoret Phys, CAS Key Lab Theoret Phys, Beijing 100190, Peoples R China 3.Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China 4.Univ Hong Kong, HKU UCAS Joint Inst Theoret & Computat Phys, Pokfulam Rd, Hong Kong, Peoples R China 5.Beihang Univ, Sch Phys, Beijing 100191, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lin, Xiyue,Chen, Bin-Bin,Li, Wei,et al. Exciton Proliferation and Fate of the Topological Mott Insulator in a Twisted Bilayer Graphene Lattice Model[J]. PHYSICAL REVIEW LETTERS,2022,128(15):157201. |
| APA | Lin, Xiyue,Chen, Bin-Bin,Li, Wei,Meng, Zi Yang,&Shi, Tao.(2022).Exciton Proliferation and Fate of the Topological Mott Insulator in a Twisted Bilayer Graphene Lattice Model.PHYSICAL REVIEW LETTERS,128(15),157201. |
| MLA | Lin, Xiyue,et al."Exciton Proliferation and Fate of the Topological Mott Insulator in a Twisted Bilayer Graphene Lattice Model".PHYSICAL REVIEW LETTERS 128.15(2022):157201. |
入库方式： OAI收割
来源：理论物理研究所
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